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NEW TERMINATION ARCHITECTURE FOR 1700 V DIAMOND SCHOTTKY DIODE
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| Author(s) |
Houssam ARBESS, Karine ISOIRD, Saleem HAMADY |
| Abstract |
New field plate architecture is applied to pseudo vertical diamond Schottky diode. Using several field plate architectures, a TCAD simulation is realized in order to reduce the electric field in the dielectric while maintaining high breakdown voltage. Firstly and after simple variations in the field plate architecture, the breakdown voltage was improved from 1632 V to 2141 V at 700 K. Concerning Emax in the dielectric, we obtained a decreasing of maximum electric field from 57 to 18 MV/cm. |
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| Filename: | 0454-epe2013-full-16043037.pdf |
| Filesize: | 846.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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