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Investigation of 1.2 kV SiC MOSFETs for Aeronautics Applications
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| Author(s) |
Dhouha OTHMAN, Stephane LEFEBVRE, Mounira BERKANI, Zoubir KHATIR, Ali IBRAHIM, Arezki BOUZOURENE |
| Abstract |
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test. |
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| Filename: | 0802-epe2013-full-19421978.pdf |
| Filesize: | 813.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2014-02-09 by System |
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