EPE Association: EPE-PEMC 2002 - Topic 02: Semiconductor Devices

EPE-PEMC 2002 - Topic 02: Semiconductor Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2002 - Conference > EPE-PEMC 2002 - Topic 02: Semiconductor Devices

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   4.5kV SiC pn-Diodes With High Current Capability
By M. Braun; H. Mitlehner; W. Bartsch; B. Weis [View]
[Download]

Abstract: 4.5kV Silicon Carbide pn-diodes have been fabricated. In this paper, device fabrication and static performance are described. Dynamic characteristics have been tested in a chopper circuit up to a dc link voltage of 2.5kV, explaining improvements of these new devices compared to previous publications. Switching waveforms up to a current of 770A are presented for the first time. dv/dt was varied from 5kV/µs to 50kV/µs. Storage charge, switching speed and parallel operation of several chips are discussed in detail.

   600V Trench Gate PT type IGBT Development Utilizing Ultra Thin Wafer Technology
By N. Kimura; S. Umekawa; T. Tsunoda; S. Kurushima; T. Matsudai; A. Nakagawa; T. Okuno; M. Tanaka [View]
[Download]

Abstract: A new 600V Trench Gate PT type IGBT has been developed. This new IGBT is adopted 60um ultra thin wafer technology for the first time. By combining trench gate, low injection efficiency and 60um ultra thin wafer technology, this new design has led to roughly 18% reduction of power dissipation over the latest trench gate thin NPT-IGBT design. As a simulation result, by utilizing this new chip into Toshiba’s “Compact IPM”, of which mounting area reduces roughly 40% compared to that of conventional IPM package, the brand new “Compact IPM” is expected to see nearly the same case temperature (Tc) with much lower junction temperature (Tj) under a given operating condition.

   A Simple Evaluation Method of the Transient Thermal Response of Semiconductor Packages: Theory, Application and Identification Procedure
By N. Y. A. Shammas; F. Masana; M. P. Rodriguez [View]
[Download]

Abstract: This paper presents a simple experimental method for the transient thermal characterisation of semiconductor packages and demonstrates the use of the method for reliability investigations. The method is based upon the assumption that in many cases, the device temperature evolution can be accurately described by a few exponential terms, as will be shown to be the case when transient thermal response has widely separated time constants. The aim is to synthesise a dynamic thermal model, composed by discrete thermal resistances and capacitances, from the measured transient response, which can be used in circuit simulators in order to predict the dynamic thermal behaviour of the device under any working condition. This paper consists of two parts. In the first one, the proposed method is described step-by-step and it is applied to a number of commercial SmartpackÆÊ modules. In the second part, an identification procedure that allows establishing the physical correspondence between the RC cells of the thermal model and the layers that constitute the electronic package is proposed. The results provide useful information about the influence of material¡¦s properties and geometry on the step-response. Finally, this paper reports on the use of the method for package quality control and reliability investigations.

   A simple thermal conductivity measurement system
By F. Madrid; J. Rebollo; X. Jorda; P. Godignon; M. Vellvehí [View]
[Download]

Abstract: A thermal conductivity measurement system has been designed and implemented in order to get more reliable values for thermal CAD simulation. The physical fundamentals are exposed as well as the design and technological solutions adopted for the implementation. Some experimental results have been obtained from two different materials.

   Application of SiC Devices in Power Supplies
By T. Reimann; H. Mitlehner; I. Zverev; P. Friedrichs; J. Petzoldt [View]
[Download]

Abstract: The potential of silicon carbide as the basic material for power semiconductor devices is discussed in this paper. Concepts for high-voltage SiC devices (Schottky Barrier Diode, pin-Diode, JFET) are presented. Specific problems of ultra-fast power devices in the parasitic circuit environment are shown. Finally, some realized switched-mode power supply (SMPS) applications for state-of-the-art SiC power semiconductor devices are presented and compared with benchmark silicon solutions.

   Can Silicon Surge Voltage Suppressors Reach the Absorption Energy Capability of Varistors?
By V. N. Obreja; A. Obreja; K. I. Nuttall [View]
[Download]

Abstract: The absorption energy capability of commercial available varistors reaches hundreds of Joules at surge conducting currents of thousands of Amperes. In this paper a short analysis of characteristics and limitations of the most common surge voltage absorbers (silicon suppressors and varistors) is carried out. Typical experimental results are presented for some silicon transient voltage suppressors. Commercially available silicon surge voltage suppressors exhibiting comparable absorption energy with low dimension varistors are indicated. To reach the absorption energy capability of varistors of higher nominal voltage or large dimensions, surge suppressor modules have to be realized by series connection of silicon bi-directional structures of lower breakdown voltage. Preliminary results are reported. Some limitations preventing achievement of a higher absorption energy of available silicon structures with bulk avalanche breakdown are presented.

   Fast Emitter Commutated Thyristor for Current-Fed Frequency Converters
By A. M. Surma; A. Y. Semenov [View]
[Download]

Abstract: 1000A, 2000V Emitter Commutated Thyristor (ECT - hard drive GTO, controlled by switching low-voltage MOSFET-key in cathode circuit) with the symmetrical blocking characteristic is developed. New ECT has the decreased turn-on and turn-off loss energy, small reverse recovery charge and can be used in current-fed frequency converters operating in frequency band 1000-5000Hz.

   From Transient Thermal Impedance Measurement to Successful Electrothermal Simulation
By Z. Jakopovic; V. Sunde; Z. Bencic [View]
[Download]

Abstract: Electrothermal simulation of power electronic semiconductors is often required for optimization of power electronic circuits and systems. This requires accurate, but not too complex electrothermal models of power semiconductors to be used in commercially available power electronic circuit simulators. The paper presents the whole procedure, starting from transient thermal impedance measurement, identification of semiconductor's thermal circuit parameters and finally, electrothermal simulation based on newly developed electrothermal power MOSFET model implemented in SIMPLORER simulator. Model consists of electrical and thermal part with interconnected exchange of variables. The accuracy of proposed procedure was tested on real circuit example.

   He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT
By P. Spirito; F. Frisina; E. Napoli; L. Fragapane; A. G. M. Strollo; D. Fagone [View]
[Download]

Abstract: The application of buffer-layer engineering and of local lifetime control using He voids for the design of a 600V punch-through IGBT is presented. Aim of the study is the optimization of the trade-off between on-state voltage drop and turn-off time in recent high speed IGBT. Numerical 2D mixed-mode device-circuit simulations are used to evaluate the effect of lifetime control on device performance. Presented results show that local lifetime control provides better performance and flexibility with respect to uniform lifetime control. The comparison between buffer-layer engineering and uniform lifetime control shows that buffer-layer engineering provides no performance improvement. Optimal design is obtained effecting lifetime killing action in the buffer-layer near the junction between buffer-layer and substrate.

   High Current 75V MOSFET Module for 42V Automotive Systems - Sub-m _ 600A Half-bridge and 300A Full-bridge Modules -
By T. Tsunoda; M. Shintome; K. Nishitani; N. Shingai; G. Tchouangue [View]
[Download]

Abstract: Adapting the newly developed 75V trench gated MOSFET chip with optimized package design for MOSFET module, ultra low on-resistance 0.85m§Ù including internal power connection resistance has been attained for the first time as 600A module. Using SiN DCB and optimized solder process, these modules have reasonable thermal and mechanical reliabilities for automotive 42V system applications. The new module will be one of the most suitable solution for automotive 42V system applications. This paper aims to present the design features of these high power MOSFET modules.

   Low On-Resistance 40V LDMOS with A New RESURF Structure in Submicron BCDMOS
By S. K. Lee; Y. C. Choi; C. J. Kim; T. H. Kwon; H. S. Kang; C. S. Song [View]
[Download]

Abstract: In this paper, we report the novel RESURF structure of LDMOS TR with p-bottom layer to improve On-Resistance. The developed LDMOS achieved the low On-resistance, which is improved by 25% compared to conventional structure LDMOS TR. In addition to this result, this LDMOS had the good reliability because the high field point moves surface to bulk and showed the excellent safe operating area compared to conventional structure. Technique and issues related to this transistor are concerned and discussed.

   New Magnetic Driver for Bistable Electronic Power Switches
By J. Jalade; R. Pezzani; M. Breil; J. L. Sanchez [View]
[Download]

Abstract: In this paper a specific function is proposed to achieve a bistable mode control dedicated to 230 V mains voltage applications operating in ON/OFF mode. We investigated a switching function exhibiting a memory effect, so that only two control pulses are required, one for turn-ON, and another one for turn-OFF. A square hysteresis loop magnetic core was used to obtain the memory effect. The memory function feasibility was experimentally validated within the control of a thyristor.

   New MOS gated triac structures for specific mains applications
By A. Bourennane; J. Jalade; P. Austin; M. Breil; J.-L. Sanchez [View]
[Download]

Abstract: Two MOS gated triac structures based on functional integration are proposed, their operation modes are described and verified using qualitative 2-D numerical simulations. Their bidirectional feature makes their use attractive as AC switches for mains applications (50Hz). The first device is based on the triac structure. The second one uses a P+ wall that extends from the top to the bottom of the silicon wafer to ensure the turn-on in the third quadrant of operation. These two devices have the advantage of being controlled by MOS transistors. Therefore, they can be easily driven by integrated circuits and they allow to reduce the required energy for the device turn-on.

   PSPICE-Functional Models of Power Semiconductor Devices for Power Electronics Applications
By J. Deskur; J. Pilacinski [View]
[Download]

Abstract: In the paper, a new method of the functional modeling of the Power Semiconductor Devices (PSD) is presented. The network models of diode, IGBT transistor, SCR and GTO thyristors for use in the power electronics circuits and systems simulations has been presented. The models consist of a switch whose resistance is controlled digitally and enable to map current and voltage across the PSD terminals under static and transient conditions. Their operation is reliable and sure. The identification methods for parameters of the models refer to the measuring data.

   Single Chip Implementation of 600V IGBT and Freewheeling Diode
By E. Napoli; D. Fagone; L. Fragapane; A. G. M. Strollo; F. Frisina; P. Spirito [View]
[Download]

Abstract: Numerical two-dimensional simulations and experimental results regarding a compound structure including a 600V IGBT and a freewheeling diode are presented. The structure is realized connecting the IGBT field stop ring to the substrate through external bonding. The analysis shows that coupling between diode and IGBT has no negative effect on overall structure performance. The only relevant effect is the presence of negative resistance behavior in the direct characteristic of the IGBT. The negative resistance is due to the shunting effect of the external bonding on the substrate-epilayer diode. However, presented analyses and experiments show that the negative resistance happens only for very low direct currents and that the effect is negligible in real structures.

   Switching Characterization of the Reverse Blocking IGBTs in a Matrix Converter Structure Without Diodes
By J.-J. Huselstein; H. Boulant; Chr. Glaize [View]
[Download]

Abstract: The reverse voltage blocking IGBT is a step toward the integration of the bidirectional switch needed in the construction of matrix converters. It avoids the two supplementary diodes needed with standard IGBTs and the associated voltage drop. This article presents a study of this new component, especially aspects linked with the commutation in matrix converters.

   Voltage source inverter in the medium voltage range
By M. Ruff; G. Zaiser; R. Sommer [View]
[Download]

Abstract: In the medium voltage range up to ca. 6kV motor voltage voltage source inverters are generally ac-cepted. Different circuit topologies are used. As power semiconductor switches IGBTs and hard driven GTOs (also called GCT or IGCT [1]), an advancement of the GTO, are available. The selec-tion of the suitable devices depend on the application and the power range. In this paper, we discuss the characteristics of the power devices and the different applications of the various circuit topologies.

EPE-PEMC 2002 - Topic 02: Semiconductor Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2002 - Conference > EPE-PEMC 2002 - Topic 02: Semiconductor Devices
	[return to parent folder]

	4.5kV SiC pn-Diodes With High Current Capability By M. Braun; H. Mitlehner; W. Bartsch; B. Weis	[View] [Download]
Abstract: 4.5kV Silicon Carbide pn-diodes have been fabricated. In this paper, device fabrication and static performance are described. Dynamic characteristics have been tested in a chopper circuit up to a dc link voltage of 2.5kV, explaining improvements of these new devices compared to previous publications. Switching waveforms up to a current of 770A are presented for the first time. dv/dt was varied from 5kV/µs to 50kV/µs. Storage charge, switching speed and parallel operation of several chips are discussed in detail.

	600V Trench Gate PT type IGBT Development Utilizing Ultra Thin Wafer Technology By N. Kimura; S. Umekawa; T. Tsunoda; S. Kurushima; T. Matsudai; A. Nakagawa; T. Okuno; M. Tanaka	[View] [Download]
Abstract: A new 600V Trench Gate PT type IGBT has been developed. This new IGBT is adopted 60um ultra thin wafer technology for the first time. By combining trench gate, low injection efficiency and 60um ultra thin wafer technology, this new design has led to roughly 18% reduction of power dissipation over the latest trench gate thin NPT-IGBT design. As a simulation result, by utilizing this new chip into Toshiba’s “Compact IPM”, of which mounting area reduces roughly 40% compared to that of conventional IPM package, the brand new “Compact IPM” is expected to see nearly the same case temperature (Tc) with much lower junction temperature (Tj) under a given operating condition.

	A Simple Evaluation Method of the Transient Thermal Response of Semiconductor Packages: Theory, Application and Identification Procedure By N. Y. A. Shammas; F. Masana; M. P. Rodriguez	[View] [Download]
Abstract: This paper presents a simple experimental method for the transient thermal characterisation of semiconductor packages and demonstrates the use of the method for reliability investigations. The method is based upon the assumption that in many cases, the device temperature evolution can be accurately described by a few exponential terms, as will be shown to be the case when transient thermal response has widely separated time constants. The aim is to synthesise a dynamic thermal model, composed by discrete thermal resistances and capacitances, from the measured transient response, which can be used in circuit simulators in order to predict the dynamic thermal behaviour of the device under any working condition. This paper consists of two parts. In the first one, the proposed method is described step-by-step and it is applied to a number of commercial SmartpackÆÊ modules. In the second part, an identification procedure that allows establishing the physical correspondence between the RC cells of the thermal model and the layers that constitute the electronic package is proposed. The results provide useful information about the influence of material¡¦s properties and geometry on the step-response. Finally, this paper reports on the use of the method for package quality control and reliability investigations.

	A simple thermal conductivity measurement system By F. Madrid; J. Rebollo; X. Jorda; P. Godignon; M. Vellvehí	[View] [Download]
Abstract: A thermal conductivity measurement system has been designed and implemented in order to get more reliable values for thermal CAD simulation. The physical fundamentals are exposed as well as the design and technological solutions adopted for the implementation. Some experimental results have been obtained from two different materials.

	Application of SiC Devices in Power Supplies By T. Reimann; H. Mitlehner; I. Zverev; P. Friedrichs; J. Petzoldt	[View] [Download]
Abstract: The potential of silicon carbide as the basic material for power semiconductor devices is discussed in this paper. Concepts for high-voltage SiC devices (Schottky Barrier Diode, pin-Diode, JFET) are presented. Specific problems of ultra-fast power devices in the parasitic circuit environment are shown. Finally, some realized switched-mode power supply (SMPS) applications for state-of-the-art SiC power semiconductor devices are presented and compared with benchmark silicon solutions.

	Can Silicon Surge Voltage Suppressors Reach the Absorption Energy Capability of Varistors? By V. N. Obreja; A. Obreja; K. I. Nuttall	[View] [Download]
Abstract: The absorption energy capability of commercial available varistors reaches hundreds of Joules at surge conducting currents of thousands of Amperes. In this paper a short analysis of characteristics and limitations of the most common surge voltage absorbers (silicon suppressors and varistors) is carried out. Typical experimental results are presented for some silicon transient voltage suppressors. Commercially available silicon surge voltage suppressors exhibiting comparable absorption energy with low dimension varistors are indicated. To reach the absorption energy capability of varistors of higher nominal voltage or large dimensions, surge suppressor modules have to be realized by series connection of silicon bi-directional structures of lower breakdown voltage. Preliminary results are reported. Some limitations preventing achievement of a higher absorption energy of available silicon structures with bulk avalanche breakdown are presented.

	Fast Emitter Commutated Thyristor for Current-Fed Frequency Converters By A. M. Surma; A. Y. Semenov	[View] [Download]
Abstract: 1000A, 2000V Emitter Commutated Thyristor (ECT - hard drive GTO, controlled by switching low-voltage MOSFET-key in cathode circuit) with the symmetrical blocking characteristic is developed. New ECT has the decreased turn-on and turn-off loss energy, small reverse recovery charge and can be used in current-fed frequency converters operating in frequency band 1000-5000Hz.

	From Transient Thermal Impedance Measurement to Successful Electrothermal Simulation By Z. Jakopovic; V. Sunde; Z. Bencic	[View] [Download]
Abstract: Electrothermal simulation of power electronic semiconductors is often required for optimization of power electronic circuits and systems. This requires accurate, but not too complex electrothermal models of power semiconductors to be used in commercially available power electronic circuit simulators. The paper presents the whole procedure, starting from transient thermal impedance measurement, identification of semiconductor's thermal circuit parameters and finally, electrothermal simulation based on newly developed electrothermal power MOSFET model implemented in SIMPLORER simulator. Model consists of electrical and thermal part with interconnected exchange of variables. The accuracy of proposed procedure was tested on real circuit example.

	He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT By P. Spirito; F. Frisina; E. Napoli; L. Fragapane; A. G. M. Strollo; D. Fagone	[View] [Download]
Abstract: The application of buffer-layer engineering and of local lifetime control using He voids for the design of a 600V punch-through IGBT is presented. Aim of the study is the optimization of the trade-off between on-state voltage drop and turn-off time in recent high speed IGBT. Numerical 2D mixed-mode device-circuit simulations are used to evaluate the effect of lifetime control on device performance. Presented results show that local lifetime control provides better performance and flexibility with respect to uniform lifetime control. The comparison between buffer-layer engineering and uniform lifetime control shows that buffer-layer engineering provides no performance improvement. Optimal design is obtained effecting lifetime killing action in the buffer-layer near the junction between buffer-layer and substrate.

	High Current 75V MOSFET Module for 42V Automotive Systems - Sub-m _ 600A Half-bridge and 300A Full-bridge Modules - By T. Tsunoda; M. Shintome; K. Nishitani; N. Shingai; G. Tchouangue	[View] [Download]
Abstract: Adapting the newly developed 75V trench gated MOSFET chip with optimized package design for MOSFET module, ultra low on-resistance 0.85m§Ù including internal power connection resistance has been attained for the first time as 600A module. Using SiN DCB and optimized solder process, these modules have reasonable thermal and mechanical reliabilities for automotive 42V system applications. The new module will be one of the most suitable solution for automotive 42V system applications. This paper aims to present the design features of these high power MOSFET modules.

	Low On-Resistance 40V LDMOS with A New RESURF Structure in Submicron BCDMOS By S. K. Lee; Y. C. Choi; C. J. Kim; T. H. Kwon; H. S. Kang; C. S. Song	[View] [Download]
Abstract: In this paper, we report the novel RESURF structure of LDMOS TR with p-bottom layer to improve On-Resistance. The developed LDMOS achieved the low On-resistance, which is improved by 25% compared to conventional structure LDMOS TR. In addition to this result, this LDMOS had the good reliability because the high field point moves surface to bulk and showed the excellent safe operating area compared to conventional structure. Technique and issues related to this transistor are concerned and discussed.

	New Magnetic Driver for Bistable Electronic Power Switches By J. Jalade; R. Pezzani; M. Breil; J. L. Sanchez	[View] [Download]
Abstract: In this paper a specific function is proposed to achieve a bistable mode control dedicated to 230 V mains voltage applications operating in ON/OFF mode. We investigated a switching function exhibiting a memory effect, so that only two control pulses are required, one for turn-ON, and another one for turn-OFF. A square hysteresis loop magnetic core was used to obtain the memory effect. The memory function feasibility was experimentally validated within the control of a thyristor.

	New MOS gated triac structures for specific mains applications By A. Bourennane; J. Jalade; P. Austin; M. Breil; J.-L. Sanchez	[View] [Download]
Abstract: Two MOS gated triac structures based on functional integration are proposed, their operation modes are described and verified using qualitative 2-D numerical simulations. Their bidirectional feature makes their use attractive as AC switches for mains applications (50Hz). The first device is based on the triac structure. The second one uses a P+ wall that extends from the top to the bottom of the silicon wafer to ensure the turn-on in the third quadrant of operation. These two devices have the advantage of being controlled by MOS transistors. Therefore, they can be easily driven by integrated circuits and they allow to reduce the required energy for the device turn-on.

	PSPICE-Functional Models of Power Semiconductor Devices for Power Electronics Applications By J. Deskur; J. Pilacinski	[View] [Download]
Abstract: In the paper, a new method of the functional modeling of the Power Semiconductor Devices (PSD) is presented. The network models of diode, IGBT transistor, SCR and GTO thyristors for use in the power electronics circuits and systems simulations has been presented. The models consist of a switch whose resistance is controlled digitally and enable to map current and voltage across the PSD terminals under static and transient conditions. Their operation is reliable and sure. The identification methods for parameters of the models refer to the measuring data.

	Single Chip Implementation of 600V IGBT and Freewheeling Diode By E. Napoli; D. Fagone; L. Fragapane; A. G. M. Strollo; F. Frisina; P. Spirito	[View] [Download]
Abstract: Numerical two-dimensional simulations and experimental results regarding a compound structure including a 600V IGBT and a freewheeling diode are presented. The structure is realized connecting the IGBT field stop ring to the substrate through external bonding. The analysis shows that coupling between diode and IGBT has no negative effect on overall structure performance. The only relevant effect is the presence of negative resistance behavior in the direct characteristic of the IGBT. The negative resistance is due to the shunting effect of the external bonding on the substrate-epilayer diode. However, presented analyses and experiments show that the negative resistance happens only for very low direct currents and that the effect is negligible in real structures.

	Switching Characterization of the Reverse Blocking IGBTs in a Matrix Converter Structure Without Diodes By J.-J. Huselstein; H. Boulant; Chr. Glaize	[View] [Download]
Abstract: The reverse voltage blocking IGBT is a step toward the integration of the bidirectional switch needed in the construction of matrix converters. It avoids the two supplementary diodes needed with standard IGBTs and the associated voltage drop. This article presents a study of this new component, especially aspects linked with the commutation in matrix converters.

	Voltage source inverter in the medium voltage range By M. Ruff; G. Zaiser; R. Sommer	[View] [Download]
Abstract: In the medium voltage range up to ca. 6kV motor voltage voltage source inverters are generally ac-cepted. Different circuit topologies are used. As power semiconductor switches IGBTs and hard driven GTOs (also called GCT or IGCT [1]), an advancement of the GTO, are available. The selec-tion of the suitable devices depend on the application and the power range. In this paper, we discuss the characteristics of the power devices and the different applications of the various circuit topologies.