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From Transient Thermal Impedance Measurement to Successful Electrothermal Simulation
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| Author(s) |
Z. Jakopovic; V. Sunde; Z. Bencic |
| Abstract |
Electrothermal simulation of power electronic semiconductors is often required for optimization of power electronic circuits and systems. This requires accurate, but not too complex electrothermal models of power semiconductors to be used in commercially available power electronic circuit simulators. The paper presents the whole procedure, starting from transient thermal impedance measurement, identification of semiconductor's thermal circuit parameters and finally, electrothermal simulation based on newly developed electrothermal power MOSFET model implemented in SIMPLORER simulator. Model consists of electrical and thermal part with interconnected exchange of variables. The accuracy of proposed procedure was tested on real circuit example. |
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| Filename: | EPE-PEMC2002 - T2-016 - Jakopovic.pdf |
| Filesize: | 377.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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