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New MOS gated triac structures for specific mains applications
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| Author(s) |
A. Bourennane; J. Jalade; P. Austin; M. Breil; J.-L. Sanchez |
| Abstract |
Two MOS gated triac structures based on functional integration are proposed, their operation modes are described and verified using qualitative 2-D numerical simulations. Their bidirectional feature makes their use attractive as AC switches for mains applications (50Hz). The first device is based on the triac structure. The second one uses a P+ wall that extends from the top to the bottom of the silicon wafer to ensure the turn-on in the third quadrant of operation. These two devices have the advantage of being controlled by MOS transistors. Therefore, they can be easily driven by integrated circuits and they allow to reduce the required energy for the device turn-on. |
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| Filename: | EPE-PEMC2002 - T2-001 - Bourennane.pdf |
| Filesize: | 314.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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