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4.5kV SiC pn-Diodes With High Current Capability
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| Author(s) |
M. Braun; H. Mitlehner; W. Bartsch; B. Weis |
| Abstract |
4.5kV Silicon Carbide pn-diodes have been fabricated. In this paper, device fabrication and static performance are described. Dynamic characteristics have been tested in a chopper circuit up to a dc link voltage of 2.5kV, explaining improvements of these new devices compared to previous publications. Switching waveforms up to a current of 770A are presented for the first time. dv/dt was varied from 5kV/µs to 50kV/µs. Storage charge, switching speed and parallel operation of several chips are discussed in detail. |
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| Filename: | EPE-PEMC2002 - T2-018 - Braun.pdf |
| Filesize: | 475.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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