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High Current 75V MOSFET Module for 42V Automotive Systems - Sub-m _ 600A Half-bridge and 300A Full-bridge Modules -
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| Author(s) |
T. Tsunoda; M. Shintome; K. Nishitani; N. Shingai; G. Tchouangue |
| Abstract |
Adapting the newly developed 75V trench gated MOSFET chip with optimized package design for
MOSFET module, ultra low on-resistance 0.85m§Ù including internal power connection resistance has
been attained for the first time as 600A module. Using SiN DCB and optimized solder process, these
modules have reasonable thermal and mechanical reliabilities for automotive 42V system applications.
The new module will be one of the most suitable solution for automotive 42V system applications.
This paper aims to present the design features of these high power MOSFET modules. |
| Download |
| Filename: | EPE-PEMC2002 - T2-004 - Tsunoda.pdf |
| Filesize: | 220.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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