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Single Chip Implementation of 600V IGBT and Freewheeling Diode
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| Author(s) |
E. Napoli; D. Fagone; L. Fragapane; A. G. M. Strollo; F. Frisina; P. Spirito |
| Abstract |
Numerical two-dimensional simulations and experimental results regarding a compound structure including a 600V IGBT and a freewheeling diode are presented. The structure is realized connecting the IGBT field stop ring to the substrate through external bonding. The analysis shows that coupling between diode and IGBT has no negative effect on overall structure performance. The only relevant effect is the presence of negative resistance behavior in the direct characteristic of the IGBT. The negative resistance is due to the shunting effect of the external bonding on the substrate-epilayer diode. However, presented analyses and experiments show that the negative resistance happens only for very low direct currents and that the effect is negligible in real structures. |
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| Filename: | EPE-PEMC2002 - T2-014 - Napoli.pdf |
| Filesize: | 286.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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