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600V Trench Gate PT type IGBT Development Utilizing Ultra Thin Wafer Technology
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| Author(s) |
N. Kimura; S. Umekawa; T. Tsunoda; S. Kurushima; T. Matsudai; A. Nakagawa; T. Okuno; M. Tanaka |
| Abstract |
A new 600V Trench Gate PT type IGBT has been developed. This new IGBT is adopted 60um ultra thin wafer technology for the first time. By combining trench gate, low injection efficiency and 60um ultra thin wafer technology, this new design has led to roughly 18% reduction of power dissipation over the latest trench gate thin NPT-IGBT design. As a simulation result, by utilizing this new chip into Toshiba’s “Compact IPM”, of which mounting area reduces roughly 40% compared to that of conventional IPM package, the brand new “Compact IPM” is expected to see nearly the same case temperature (Tc) with much lower junction temperature (Tj) under a given operating condition. |
| Download |
| Filename: | EPE-PEMC2002 - T2-005 - Kimura.pdf |
| Filesize: | 240.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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