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Application of SiC Devices in Power Supplies
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| Author(s) |
T. Reimann; H. Mitlehner; I. Zverev; P. Friedrichs; J. Petzoldt |
| Abstract |
The potential of silicon carbide as the basic material for power semiconductor devices is discussed in
this paper. Concepts for high-voltage SiC devices (Schottky Barrier Diode, pin-Diode, JFET) are
presented. Specific problems of ultra-fast power devices in the parasitic circuit environment are
shown. Finally, some realized switched-mode power supply (SMPS) applications for state-of-the-art
SiC power semiconductor devices are presented and compared with benchmark silicon solutions. |
| Download |
| Filename: | EPE-PEMC2002 - T2-020 - Reimann.pdf |
| Filesize: | 771.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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