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He voids lifetime control compared with buffer-layer engineering for a 600V punch-through IGBT
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| Author(s) |
P. Spirito; F. Frisina; E. Napoli; L. Fragapane; A. G. M. Strollo; D. Fagone |
| Abstract |
The application of buffer-layer engineering and of local lifetime control using He voids for the design of a 600V punch-through IGBT is presented. Aim of the study is the optimization of the trade-off between on-state voltage drop and turn-off time in recent high speed IGBT. Numerical 2D mixed-mode device-circuit simulations are used to evaluate the effect of lifetime control on device performance. Presented results show that local lifetime control provides better performance and flexibility with respect to uniform lifetime control. The comparison between buffer-layer engineering and uniform lifetime control shows that buffer-layer engineering provides no performance improvement. Optimal design is obtained effecting lifetime killing action in the buffer-layer near the junction between buffer-layer and substrate. |
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| Filename: | EPE-PEMC2002 - T2-007 - Spirito.pdf |
| Filesize: | 258.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2004-05-13 by System |
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