| Abstract |
In the paper, a new method of the functional modeling of the Power Semiconductor Devices (PSD) is presented. The network models of diode, IGBT transistor, SCR and GTO thyristors for use in the power electronics circuits and systems simulations has been presented. The models consist of a switch whose resistance is controlled digitally and enable to map current and voltage across the PSD terminals under static and transient conditions. Their operation is reliable and sure. The identification methods for parameters of the models refer to the measuring data. |
