EPE Association: EPE 1991 - 06 - Session 1.6: SMALL AND MEDIUM POWER DEVICES

EPE 1991 - 06 - Session 1.6: SMALL AND MEDIUM POWER DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - Conference > EPE 1991 - 06 - Session 1.6: SMALL AND MEDIUM POWER DEVICES

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   Quasi-saturation Circuit Developement For High Frequency Power Transistor Switches
By J. M. Li; D. Lafore; J. Arnould [View]
[Download]

Abstract: The use of bipolar transistors in high frequency power conversion applications is often limited by device storage time ts due to an excess of base charge injection. Storage time can be reduced by using anti-saturation circuits and hjgh-performance turn-off circuits; however the research for new anti-saturation circuits will be the main subject of study on the future high frequency power transistor switches because of performance limitation of turn-off circuits. In this paper, first, we analyse the static operation principle of the existing anti-saturation circuits, then we show the dynamic problems in these circuits during turn-on commutation (forced and natural) and during conduction of a variable collector current. Further, practical guidelines are given for designing high frequency power transistor quasi-saturation circuits.

   LOSSES IN FET-BASED CONVERTERS WITH AND WITHOUT EXTERNAL FLYWHEEL DIODES
By W. G. Dunford; G. Liu [View]
[Download]

Abstract: Early Field Effect Transistors incorporporated parasitic body diodes with poor characteristics. In many applications an external diode network was used to isolate diode resulting in a more complex hardware design. More recent FETs have faster integrated diodes, although these are still inferior to discrete components. This paper presents comparative loss measurements for an inverter with and without external diodes. It is shown that even with more recent FETs there is an advantage to using external isolation diodes.

   COMPUTER PROGRAM FOR DESIGNING SNUBBER CIRCUIT FOR AN IGBT- INVERTER
By M. A. E. Andersen; H. Havemann [View]
[Download]

Abstract: A computer program is proposed which enables the user quickly and easily to make an optimum design of the values of the snubber components for an inverter which uses a minimum number of components in the snubber circuit. A graphic presentation of the boundaries for maximum ratings, solution-space, is made in which one can choose the values which ensure safe operating. As evaluation-criteria for making the optimum choice of the values the computer program further presents the switching energy losses during turn-on and turn-off and the total turn-on/off time of the snubber circuit so that these criteria can be taken into account in the actual design.

   INFLUENCE OF BASE DRIVE ON THE RBSOA OF POWER BIPOLAR TRANSISTORS
By H. Kerboua; D. Sebille; F. Miserey [View]
[Download]

Abstract: A non destructive test fixture based on IGBT has been developped to investigate the RBSOA of power Bipolar Junction Transistor (BJT). It allows the test of BJT in second breakdown, while switching high current in inductive circuit with high voltage clamping. The measurements have been performed on several BJTs available on the market, by using only one device of each type. The results of the test show that any BJT can switch its nominal current under VCBO as long as the extracted base current is greater than the collector one. The comparison of different technologies is made and shows the dependance of the RBSOA with the technology of the transistor, the base drive, the saturation level in conduction and the temperature.

   IGBT Devices in a Voltage Mode Resonant DC Link lnverter
By K. Heumann; Ch. Keller; R. Sommer [View]
[Download]

Abstract: To reduce switching losses in switching power converters resonant and quasi-resonant circuit topologies are getting more and more popular. To investigate the behaviour of IGBTs in a Resonant DC-Link inverter, a test circuit in zero voltage switching mode is presented. In this test circuit the semiconductor devices are stressed in a similiar way as in the real inverter. The switching frequency has been increased up to 100 kHz. Measured waveforms and results with IGBTs in the test circuit and a one phase Active Clamped Resonant DC-Link inverter are presented. A detailed investigation of losses in the semiconductor devices dependent on the resonant tank is given.

   THE DYNAMIC PERFORMANCE OF BIPOLAR POWER TRANSISTORS IN THE ON-STATE
By Y. Lu [View]
[Download]

Abstract: In this paper models of the dynamic performance of a single bipolar power transistor and a darlington are proposed. These models are established according to working regions of the single transistor or the darlington. From these models mathematical representations of the dynamic performance of the single transistor and the darlington are derived. The mathematical representations suqgest parameters which determine the dynamic performance of the transistor and darlington. These parameters can be extracted and approximated from measurements. A method is introduced to obtain one of the most important parameters through simulating the transistor with the PSPICE. Some experiment results of the dynamic performance of a single power transistor and a darlington are given.

   LOW LOSS OPERATION OF BIPOLAR TRANSISTOR POWER STAGES
By H.-G. Eckel; L. Sack [View]
[Download]

Abstract: In comparison with voltage-controlled power devices (MOSFETs and IGBTs) the advantage of bipolar power transistors is the higher value of current density, which leads to a lower voltage drop. To get profit out of that fact means to provide a considerable base current and to avoid darlington topologies. The paper deals with suitale switched-mode base current sources. In contrast to earlier papers these sources are PWM-controlled in order to operate the bipolar power transistor within the quasi-saturation region. In this way storage times do not appear and parallel operation of standard transistors is possible instead of the use of expensive giant transistors. Experimental results of different driver circuits and power circuits are presented. The effects of different control methods are discussed and demonstrated by experimental results.

   ISOLATED TRANSISTOR DRIVE CIRCUITS BY MEANS OF SUPER-HIGH-FREQUENCY SWITCHING CONVERTERS
By Tamotsu Ninomiya; Takashi Manabe; Yukihiro Tanizoe; Masayasu Itoh; Mignon McDonnell [View]
[Download]

Abstract: A new type of miniaturized and isolated gate-drive circuit is presented for multi-transistor systems such as a motor drive system or a bridge-type converter and inverter. This gate-drive circuit is composed of a 16MHz-switching dc-to-dc converter, which transmits the driving power to the gate of the main power switch, and a photo-coupler, which controls the intermittent operation of the above dc-to-dc converter according to a PWM control signal. The gate-drive circuit can be miniaturized considerably when compared to the conventional circuit. The application to a three-phase servo-motor drive system is investigated.

   A NEW ISOLATED GATE DRIVE FOR POWER MOSFETs AND IGBTs
By J. M. Bourgeois [View]
[Download]

Abstract: Power MOSFET and IGBT gate drive often face isolation and voltage fluctuation constraints. The new gate drive described hereunder uses a small pulse transformer combined with the memory effect of the Power MOSFET. This transformer is operated as a bi-directional energy / signal link between a control IC and the floating gate drive. This link has many advantages, a large duty cycle range, a perfect dV / dt immunity and a high operating voltage. Because of the pulse transformer supply energy, no floating auxiliary supply is required. lf the short circuit protection is operated, an alarm signal is transmitted from secondary to primary through the same pulse transformer. This new circuit is perfectly suited to drive floating and / or isolated switches in motor drives, uninterruptible Power supply and AC switches.

   A BASE / GATE-DRIVE CONCEPT FOR DARLINGTON / IGBT WITH OVERCURRENT PROTECTION REDUCING DEMANDS ON SNUBBER / CLAMP-CIRCUIT
By John K. Pedersen; Paul Thogersen [View]
[Download]

Abstract: A base / gate drive circuit for Darlington / IGBT's is presented. Overload and short circuit protection and snubber / clamp circuit considerations are included . An improved overcurrent protection principle based on a two level Vce-measurement after turn on is used. This principle makes it possible to choose the values of the snubber / clamp components according to main circuit constraints only. Furthermore , the transistor is disabled during reverse conduction, i. e. when the parallel diode is conducting. The drive circuits presented are based on standard components. Tests are done using 50A / 1000V Darlington and IGBT modules. The test results show, that the drive circuit, transistor and snubber / clamp circuit together make a robust and reliable power switch.

   DESIGN OF BURIED STRUCTURES FOR OPTIMUM PERFORMANCE OF SMART POWER AND HV ICs
By R. Zambrano [View]
[Download]

Abstract: This paper deals with the design of isolation and drain structures for VIPower (Vertical Intelligent Power) M1 and M2 technologies, which are among the most effective in the Power ICs field because of their use of junction isolation and vertical current flow for the power stage. Both technologies use a p-type buried layer for the isolation structure, the most challenging tasks are the control of boron outdiffusion into the upper epilayer for VIPower M1, and the minimization of drain series resistance for VIPower M2. A number of techniques have been developed and will be presented which allow VIPower devices to cover a range spanning from 1200 Volts in bipolar technology to 100 Amps VDMOSFETs.

   VERY HIGH POWER TRANSISTOR MODULES
By V. A. Potapchuk; A. N. Dumanjevich [View]
[Download]

Abstract: The results of developments of fast-switching transistor modules with a peak collector current up to 1250 A and voltages from 700 to 1000 V are given. The combination of such parameters as high current gain, low conduction losses and fast switching is optimized thanks to the special connection of three 32 mm transistor structures. To protect transistors at switchings, to improve their fast action and to prevent the inverse connection in the module network six diode structures are used. The semiconducting structure is enclosed in a plastic case having a 150 X 95 mm metal base.

   ACCESS TO PARAMETERS OF HYPERFREQUENCY TRANSISTOR MODEL FROM ITS (S) PARAMETERS MEASURES
By M. Wahbi; J. Boucher; L. Ettaleb [View]
[Download]

Abstract: On the basis of the theory of transformations and calculations of circuits [1], program has been developped [5] to estimate the (S) parameters of the transistor (bipolar, VMOS, TMOS, ...) from parameters values of a definite real model. The relationship between the (S) parameters and the elements of natural sheme of a transistor, combined with experimental measurements of these parameters, offer a simple and powerfull tool to determine the optimal parameters values of high frequency model. lt should be noted that TMOS model has been recently manifactured by Motorola. The parameters of the real model have been estimated by using empirical expressions and usual techniques of measures [5].

   IGBT FAST COMMUTATION: ACTIVE SNUBBER DESIGN
By G. Pessina; M. Peirone; C. Zimaglia [View]
[Download]

Abstract: An original type of snubber circuit, based on the use of an auxiliary switch, is discussed, and the corresponding advantages in the reduction of turn-on overcurrents are presented in comparison to usual solutions, whereas snubbing function at turn-off is fully preserved. The innovative snubber system has been recently applied for the first time on tram and metro drives of advanced characteristics.

EPE 1991 - 06 - Session 1.6: SMALL AND MEDIUM POWER DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - Conference > EPE 1991 - 06 - Session 1.6: SMALL AND MEDIUM POWER DEVICES
	[return to parent folder]

	Quasi-saturation Circuit Developement For High Frequency Power Transistor Switches By J. M. Li; D. Lafore; J. Arnould	[View] [Download]
Abstract: The use of bipolar transistors in high frequency power conversion applications is often limited by device storage time ts due to an excess of base charge injection. Storage time can be reduced by using anti-saturation circuits and hjgh-performance turn-off circuits; however the research for new anti-saturation circuits will be the main subject of study on the future high frequency power transistor switches because of performance limitation of turn-off circuits. In this paper, first, we analyse the static operation principle of the existing anti-saturation circuits, then we show the dynamic problems in these circuits during turn-on commutation (forced and natural) and during conduction of a variable collector current. Further, practical guidelines are given for designing high frequency power transistor quasi-saturation circuits.

	LOSSES IN FET-BASED CONVERTERS WITH AND WITHOUT EXTERNAL FLYWHEEL DIODES By W. G. Dunford; G. Liu	[View] [Download]
Abstract: Early Field Effect Transistors incorporporated parasitic body diodes with poor characteristics. In many applications an external diode network was used to isolate diode resulting in a more complex hardware design. More recent FETs have faster integrated diodes, although these are still inferior to discrete components. This paper presents comparative loss measurements for an inverter with and without external diodes. It is shown that even with more recent FETs there is an advantage to using external isolation diodes.

	COMPUTER PROGRAM FOR DESIGNING SNUBBER CIRCUIT FOR AN IGBT- INVERTER By M. A. E. Andersen; H. Havemann	[View] [Download]
Abstract: A computer program is proposed which enables the user quickly and easily to make an optimum design of the values of the snubber components for an inverter which uses a minimum number of components in the snubber circuit. A graphic presentation of the boundaries for maximum ratings, solution-space, is made in which one can choose the values which ensure safe operating. As evaluation-criteria for making the optimum choice of the values the computer program further presents the switching energy losses during turn-on and turn-off and the total turn-on/off time of the snubber circuit so that these criteria can be taken into account in the actual design.

	INFLUENCE OF BASE DRIVE ON THE RBSOA OF POWER BIPOLAR TRANSISTORS By H. Kerboua; D. Sebille; F. Miserey	[View] [Download]
Abstract: A non destructive test fixture based on IGBT has been developped to investigate the RBSOA of power Bipolar Junction Transistor (BJT). It allows the test of BJT in second breakdown, while switching high current in inductive circuit with high voltage clamping. The measurements have been performed on several BJTs available on the market, by using only one device of each type. The results of the test show that any BJT can switch its nominal current under VCBO as long as the extracted base current is greater than the collector one. The comparison of different technologies is made and shows the dependance of the RBSOA with the technology of the transistor, the base drive, the saturation level in conduction and the temperature.

	IGBT Devices in a Voltage Mode Resonant DC Link lnverter By K. Heumann; Ch. Keller; R. Sommer	[View] [Download]
Abstract: To reduce switching losses in switching power converters resonant and quasi-resonant circuit topologies are getting more and more popular. To investigate the behaviour of IGBTs in a Resonant DC-Link inverter, a test circuit in zero voltage switching mode is presented. In this test circuit the semiconductor devices are stressed in a similiar way as in the real inverter. The switching frequency has been increased up to 100 kHz. Measured waveforms and results with IGBTs in the test circuit and a one phase Active Clamped Resonant DC-Link inverter are presented. A detailed investigation of losses in the semiconductor devices dependent on the resonant tank is given.

	THE DYNAMIC PERFORMANCE OF BIPOLAR POWER TRANSISTORS IN THE ON-STATE By Y. Lu	[View] [Download]
Abstract: In this paper models of the dynamic performance of a single bipolar power transistor and a darlington are proposed. These models are established according to working regions of the single transistor or the darlington. From these models mathematical representations of the dynamic performance of the single transistor and the darlington are derived. The mathematical representations suqgest parameters which determine the dynamic performance of the transistor and darlington. These parameters can be extracted and approximated from measurements. A method is introduced to obtain one of the most important parameters through simulating the transistor with the PSPICE. Some experiment results of the dynamic performance of a single power transistor and a darlington are given.

	LOW LOSS OPERATION OF BIPOLAR TRANSISTOR POWER STAGES By H.-G. Eckel; L. Sack	[View] [Download]
Abstract: In comparison with voltage-controlled power devices (MOSFETs and IGBTs) the advantage of bipolar power transistors is the higher value of current density, which leads to a lower voltage drop. To get profit out of that fact means to provide a considerable base current and to avoid darlington topologies. The paper deals with suitale switched-mode base current sources. In contrast to earlier papers these sources are PWM-controlled in order to operate the bipolar power transistor within the quasi-saturation region. In this way storage times do not appear and parallel operation of standard transistors is possible instead of the use of expensive giant transistors. Experimental results of different driver circuits and power circuits are presented. The effects of different control methods are discussed and demonstrated by experimental results.

	ISOLATED TRANSISTOR DRIVE CIRCUITS BY MEANS OF SUPER-HIGH-FREQUENCY SWITCHING CONVERTERS By Tamotsu Ninomiya; Takashi Manabe; Yukihiro Tanizoe; Masayasu Itoh; Mignon McDonnell	[View] [Download]
Abstract: A new type of miniaturized and isolated gate-drive circuit is presented for multi-transistor systems such as a motor drive system or a bridge-type converter and inverter. This gate-drive circuit is composed of a 16MHz-switching dc-to-dc converter, which transmits the driving power to the gate of the main power switch, and a photo-coupler, which controls the intermittent operation of the above dc-to-dc converter according to a PWM control signal. The gate-drive circuit can be miniaturized considerably when compared to the conventional circuit. The application to a three-phase servo-motor drive system is investigated.

	A NEW ISOLATED GATE DRIVE FOR POWER MOSFETs AND IGBTs By J. M. Bourgeois	[View] [Download]
Abstract: Power MOSFET and IGBT gate drive often face isolation and voltage fluctuation constraints. The new gate drive described hereunder uses a small pulse transformer combined with the memory effect of the Power MOSFET. This transformer is operated as a bi-directional energy / signal link between a control IC and the floating gate drive. This link has many advantages, a large duty cycle range, a perfect dV / dt immunity and a high operating voltage. Because of the pulse transformer supply energy, no floating auxiliary supply is required. lf the short circuit protection is operated, an alarm signal is transmitted from secondary to primary through the same pulse transformer. This new circuit is perfectly suited to drive floating and / or isolated switches in motor drives, uninterruptible Power supply and AC switches.

	A BASE / GATE-DRIVE CONCEPT FOR DARLINGTON / IGBT WITH OVERCURRENT PROTECTION REDUCING DEMANDS ON SNUBBER / CLAMP-CIRCUIT By John K. Pedersen; Paul Thogersen	[View] [Download]
Abstract: A base / gate drive circuit for Darlington / IGBT's is presented. Overload and short circuit protection and snubber / clamp circuit considerations are included . An improved overcurrent protection principle based on a two level Vce-measurement after turn on is used. This principle makes it possible to choose the values of the snubber / clamp components according to main circuit constraints only. Furthermore , the transistor is disabled during reverse conduction, i. e. when the parallel diode is conducting. The drive circuits presented are based on standard components. Tests are done using 50A / 1000V Darlington and IGBT modules. The test results show, that the drive circuit, transistor and snubber / clamp circuit together make a robust and reliable power switch.

	DESIGN OF BURIED STRUCTURES FOR OPTIMUM PERFORMANCE OF SMART POWER AND HV ICs By R. Zambrano	[View] [Download]
Abstract: This paper deals with the design of isolation and drain structures for VIPower (Vertical Intelligent Power) M1 and M2 technologies, which are among the most effective in the Power ICs field because of their use of junction isolation and vertical current flow for the power stage. Both technologies use a p-type buried layer for the isolation structure, the most challenging tasks are the control of boron outdiffusion into the upper epilayer for VIPower M1, and the minimization of drain series resistance for VIPower M2. A number of techniques have been developed and will be presented which allow VIPower devices to cover a range spanning from 1200 Volts in bipolar technology to 100 Amps VDMOSFETs.

	VERY HIGH POWER TRANSISTOR MODULES By V. A. Potapchuk; A. N. Dumanjevich	[View] [Download]
Abstract: The results of developments of fast-switching transistor modules with a peak collector current up to 1250 A and voltages from 700 to 1000 V are given. The combination of such parameters as high current gain, low conduction losses and fast switching is optimized thanks to the special connection of three 32 mm transistor structures. To protect transistors at switchings, to improve their fast action and to prevent the inverse connection in the module network six diode structures are used. The semiconducting structure is enclosed in a plastic case having a 150 X 95 mm metal base.

	ACCESS TO PARAMETERS OF HYPERFREQUENCY TRANSISTOR MODEL FROM ITS (S) PARAMETERS MEASURES By M. Wahbi; J. Boucher; L. Ettaleb	[View] [Download]
Abstract: On the basis of the theory of transformations and calculations of circuits [1], program has been developped [5] to estimate the (S) parameters of the transistor (bipolar, VMOS, TMOS, ...) from parameters values of a definite real model. The relationship between the (S) parameters and the elements of natural sheme of a transistor, combined with experimental measurements of these parameters, offer a simple and powerfull tool to determine the optimal parameters values of high frequency model. lt should be noted that TMOS model has been recently manifactured by Motorola. The parameters of the real model have been estimated by using empirical expressions and usual techniques of measures [5].

	IGBT FAST COMMUTATION: ACTIVE SNUBBER DESIGN By G. Pessina; M. Peirone; C. Zimaglia	[View] [Download]
Abstract: An original type of snubber circuit, based on the use of an auxiliary switch, is discussed, and the corresponding advantages in the reduction of turn-on overcurrents are presented in comparison to usual solutions, whereas snubbing function at turn-off is fully preserved. The innovative snubber system has been recently applied for the first time on tram and metro drives of advanced characteristics.