| Abstract |
Power MOSFET and IGBT gate drive often face isolation and voltage fluctuation constraints. The new gate drive described hereunder uses a small pulse transformer combined with the memory effect of the Power MOSFET. This transformer is operated as a bi-directional energy / signal link between a control IC and the floating gate drive. This link has many advantages, a large duty cycle range, a perfect dV / dt immunity and a high operating voltage. Because of the pulse transformer supply energy, no floating auxiliary supply is required. lf the short circuit protection is operated, an alarm signal is transmitted from secondary to primary through the same pulse transformer. This new circuit is perfectly suited to drive floating and / or isolated switches in motor drives, uninterruptible Power supply and AC switches. |
