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VERY HIGH POWER TRANSISTOR MODULES
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| Author(s) |
V. A. Potapchuk; A. N. Dumanjevich |
| Abstract |
The results of developments of fast-switching transistor modules with a peak collector current up to 1250 A and voltages from 700 to 1000 V are given. The combination of such parameters as high current gain, low conduction losses and fast switching is optimized thanks to the special connection of three 32 mm transistor structures. To protect transistors at switchings, to improve their fast action and to prevent the inverse connection in the module network six diode structures are used. The semiconducting structure is enclosed in a plastic case having a 150 X 95 mm metal base. |
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| Filename: | Unnamed file |
| Filesize: | 2.032 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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