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Quasi-saturation Circuit Developement For High Frequency Power Transistor Switches
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| Author(s) |
J. M. Li; D. Lafore; J. Arnould |
| Abstract |
The use of bipolar transistors in high frequency power conversion applications is often limited by device storage time ts due to an excess of base charge injection. Storage time can be reduced by using anti-saturation circuits and hjgh-performance turn-off circuits; however the research for new anti-saturation circuits will be the main subject of study on the future high frequency power transistor switches because of performance limitation of turn-off circuits. In this paper, first, we analyse the static operation principle of the existing anti-saturation circuits, then we show the dynamic problems in these circuits during turn-on commutation (forced and natural) and during conduction of a variable collector current. Further, practical guidelines are given for designing high frequency power transistor quasi-saturation circuits. |
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| Filename: | Unnamed file |
| Filesize: | 3.021 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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