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A BASE / GATE-DRIVE CONCEPT FOR DARLINGTON / IGBT WITH OVERCURRENT PROTECTION REDUCING DEMANDS ON SNUBBER / CLAMP-CIRCUIT
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| Author(s) |
John K. Pedersen; Paul Thogersen |
| Abstract |
A base / gate drive circuit for Darlington / IGBT's is presented. Overload and short circuit protection and snubber / clamp circuit considerations are included . An improved overcurrent protection principle based on a two level Vce-measurement after turn on is used. This principle makes it possible to choose the values of the snubber / clamp components according to main circuit constraints only. Furthermore , the transistor is disabled during reverse conduction, i. e. when the parallel diode is conducting. The drive circuits presented are based on standard components. Tests are done using 50A / 1000V Darlington and IGBT modules. The test results show, that the drive circuit, transistor and snubber / clamp circuit together make a robust and reliable power switch. |
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| Filename: | Unnamed file |
| Filesize: | 2.966 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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