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LOW LOSS OPERATION OF BIPOLAR TRANSISTOR POWER STAGES
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| Author(s) |
H.-G. Eckel; L. Sack |
| Abstract |
In comparison with voltage-controlled power devices (MOSFETs and IGBTs) the advantage of bipolar power transistors is the higher value of current density, which leads to a lower voltage drop. To get profit out of that fact means to provide a considerable base current and to avoid darlington topologies. The paper deals with suitale switched-mode base current sources. In contrast to earlier papers these sources are PWM-controlled in order to operate the bipolar power transistor within the quasi-saturation region. In this way storage times do not appear and parallel operation of standard transistors is possible instead of the use of expensive giant transistors. Experimental results of different driver circuits and power circuits are presented. The effects of different control methods are discussed and demonstrated by experimental results. |
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| Filename: | Unnamed file |
| Filesize: | 4.273 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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