| Abstract |
This paper deals with the design of isolation and drain structures for VIPower (Vertical Intelligent Power) M1 and M2 technologies, which are among the most effective in the Power ICs field because of their use of junction isolation and vertical current flow for the power stage. Both technologies use a p-type buried layer for the isolation structure, the most challenging tasks are the control of boron outdiffusion into the upper epilayer for VIPower M1, and the minimization of drain series resistance for VIPower M2. A number of techniques have been developed and will be presented which allow VIPower devices to cover a range spanning from 1200 Volts in bipolar technology to 100 Amps VDMOSFETs. |
