| Abstract |
On the basis of the theory of transformations and calculations of circuits [1], program has been developped [5] to estimate the (S) parameters of the transistor (bipolar, VMOS, TMOS, ...) from parameters values of a definite real model. The relationship between the (S) parameters and the elements of natural sheme of a transistor, combined with experimental measurements of these parameters, offer a simple and powerfull tool to determine the optimal parameters values of high frequency model. lt should be noted that TMOS model has been recently manifactured by Motorola. The parameters of the real model have been estimated by using empirical expressions and usual techniques of measures [5]. |
