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INFLUENCE OF BASE DRIVE ON THE RBSOA OF POWER BIPOLAR TRANSISTORS
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| Author(s) |
H. Kerboua; D. Sebille; F. Miserey |
| Abstract |
A non destructive test fixture based on IGBT has been developped to investigate the RBSOA of power Bipolar Junction Transistor (BJT). It allows the test of BJT in second breakdown, while switching high current in inductive circuit with high voltage clamping. The measurements have been performed on several BJTs available on the market, by using only one device of each type. The results of the test show that any BJT can switch its nominal current under VCBO as long as the extracted base current is greater than the collector one. The comparison of different technologies is made and shows the dependance of the RBSOA with the technology of the transistor, the base drive, the saturation level in conduction and the temperature. |
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| Filename: | Unnamed file |
| Filesize: | 2.096 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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