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THE DYNAMIC PERFORMANCE OF BIPOLAR POWER TRANSISTORS IN THE ON-STATE
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| Author(s) |
Y. Lu |
| Abstract |
In this paper models of the dynamic performance of a single bipolar power transistor and a darlington are proposed. These models are established according to working regions of the single transistor or the darlington. From these models mathematical representations of the dynamic performance of the single transistor and the darlington are derived. The mathematical representations suqgest parameters which determine the dynamic performance of the transistor and darlington. These parameters can be extracted and approximated from measurements. A method is introduced to obtain one of the most important parameters through simulating the transistor with the PSPICE. Some experiment results of the dynamic performance of a single power transistor and a darlington are given. |
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| Filename: | Unnamed file |
| Filesize: | 3.363 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-08-12 by System |
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