EPE Association: EPE 2016 - DS1a: Active Components and New Materials

EPE 2016 - DS1a: Active Components and New Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - DS1a: Active Components and New Materials

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   A Galvanically Isolated Gate Driver with Low Coupling Capacitance for Medium Voltage SiC MOSFETs
By Jan GOTTSCHLICH [View]
[Download]

Abstract: This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A lowcommon mode coupling capacity of 1 pF and good electrical insulation of the power supply are achievedby using a current-loop AC-bus power supply. The SiC MOSFET is protected against unintentionalself-turn-on by a low resistance gate short-circuit that is active while the gate driver is not powered.

   A novel gate control strategy for 3.4kV cascade SiC MOSFETs stack
By Yu REN [View]
[Download]

Abstract: Several topologies of high voltage input DC/DC power supply are investigated firstly in this paper and then a novel gate control strategy for cascade SiC MOSFET stack using a single standard gate driver is proposed. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation results validate the analysis and show the availability of the proposed topology. At last 3.4KV cascade SiC MOSFET stack prototype has been designed and fabricated, the experimental results under double-pulse-test validate the proposed gate driver strategy. The proposed gate driver strategy is suitable to not only the SiC device but also the Si device.

   Advanced gate driver for IGBT devices with dv/dt and peak voltage limitation based on active gate-emitter voltage control
By Martin HOEER [View]
[Download]

Abstract: An advanced gate drive unit for 1.2 kV IGBT modules has been developed. It includes two main features: limitation of the collector-emitter voltage slope and of the collector-emitter peak voltage. This is achieved through a feedback loop with a capacitive/resistive voltage divider coupled to the gate-emitter voltage of the IGBT. For the studied case a reduction of the switching losses of around 25\% is achieves. An experimental veri_cation and comparison to a commercially available gate drive unit with active clamping based on a series connections of TVS diodes is presented. The proposed gate drive unit can be used in applications with high stray inductance to ensure optimum switching behaviour of every switching transient.

   Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation
By Dinh Lam DANG [View]
[Download]

Abstract: 4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range-30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart arecompared and explained. A physics-based analytical model for SiC MOSFET has been developed byusing the MAST language and simulated with SABER. The influences of the geometry (short channeleffects), channel mobility, temperature and the threshold voltage on transistor properties have beentaken into account. The parameters used to define the device were extracted from measurements usingMATLAB and datasheet.

   Comparative Electrothermal Analysis between SiC Schottky and Silicon PiN Diodes: Paralleling and Thermal Considerations
By Ji HU [View]
[Download]

Abstract: In power modules with high current ratings where several devices are required for parallelconnection, electrothermal balance between the parallel devices is a very important consideration. Thispaper investigates the impact of electrothermal imbalance between parallel connected devices on thethermal stability of the parallel pair. Under investigation are parallel connected 600 V silicon PiN andsilicon carbide Schottky diodes. The electrothermal imbalance between the parallel devices wasintroduced by setting different initial junction temperatures and using different thermal boundaryconditions i.e. different case temperatures. The effect of the diode technology on the thermal stresses ofthe complementing transistor is also assessed. The results show that silicon PiN diodes operate at lowerjunction temperatures because of the higher zero-temperature coefficient points in the forward currentcharacteristics, however, the complementing MOSFETs are more thermally stressed since the reverserecovery of the diode causes current overshoots in the complementing transistor. It is also shown thatSiC Schottky diodes exhibit more electrothermally stable operation under electrothermal imbalancewhen connected in parallel. Parallel connected SiC Schottky diodes with different initial junctiontemperatures and different thermal boundary conditions (case temperatures) exhibit better temperatureconvergence/stability compared to silicon PiN diodes. The temperature convergence in parallel SiCSchottky diode pairs is due to the lower Zero-Temperature Coefficient (ZTC) point compared with thePiN diode pairs, which means more equal current sharing in parallel SiC diodes.

   Current Imbalance affected by Self Turn-On during Turn-On of paralleled HV-IGBTs
By Patrick MUENSTER [View]
[Download]

Abstract: The Self Turn-ON of IGBTs leads to an increased turn-ON speed. As far as IGBTs with different thresholdvoltages are paralleled, collector current imbalances, during turn-ON, may occur. The intensity ofimbalance depends on the used gate-drive topology, influenced by the Self Turn-ON.

   Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load
By Matthias SPANG [View]
[Download]

Abstract: Inhomogeneous current sharing between parallel IGBTs can compromise the capability of power modules to withstand short circuit events. Especially if the gate voltages are influenced by coupling effects, single IGBTs will carry excessive currents. This paper analyzes the effects of different parameters on the maximum short circuit current of a 1.7kV power module composed of three parallel half bridge units with unsymmetrically connected load. Numerical simulations based on the module geometry are performed and compared to short circuit measurements. Measures for improvement in current sharing are discussed.

   Current-Direction Detection for Static MOS-Control of the BIGT in the Three-Level Neutral-Point-Clamped Converter
By Sidney GIERSCHNER [View]
[Download]

Abstract: The gate-emitter voltageVGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode. While for conventional IGBT with antiparallel free-wheeling diode VGE is at 15V regardless of current direction, it has to be adapted for the BIGT. The gate-emitter voltage VGE has to be below threshold voltage, in order to operate at low static losses in diode forward-conduction mode. This paper proposes an optimised gate control based on the direction of the load current for a three-phase three-level converter.

   Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model
By Andreas MAERZ [View]
[Download]

Abstract: In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.

   High Performance 1700V IGBT Module with the 7th Generation Chipset/Package Technologies
By Mutsumi SAWADA [View]
[Download]

Abstract: This paper describes 1700V IGBT module with the 7th generation (7G) IGBT technologies. Byfurther improvement of the chip characteristics and the development of new high reliability packagematerials and technologies, the performance of the modules are significantly improved.In addition, an extra thermal performance of lower thermal impedance is achieved with successfulimplementation of novel enhanced strength AlN isolation substrate. The integration of new chip andpackage technologies make it possible to achieve significant increase of watts density of about 30\%(11.2kW/cm2 (6G) -> 14.4kW/cm2 (7G))

   Meta-parameterisation of Power Semiconductor Devices for Studies of Efficiency and Power Density in High Power Converters
By Rene A. BARRERA-CARDENAS [View]
[Download]

Abstract: This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. Then, meta-parameterisation is performed for the High Power Semiconductor Devices (HPSDs) that are commonly used in HPCs, considering two types of package, press-pack and module type, and including IGBT, IGCT and IEGT chip technologies. A comparative analysis based on current capability and its dependency with the frequency in voltage source converters is introduced for the considered HPSD technologies. Press-pack IGBT technology shows the higher current capability and power dissipation performance, so it can be good choice for increase the operative frequency in HPCs.

   Plasma Dynamic of RC-IGBT during Desaturation Pulses
By Holger WIENCKE [View]
[Download]

Abstract: Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode.This can be utilized to put the device in a low saturation mode during conduction in diode directionand to reduce the charge before reverse-recovery. [1]This paper gives an insight into the plasma modulation during the desaturation time and the lock timeof RC-IGBTs in diode mode. The influence of these two parameters on the reverse-recovery current,the reverse-recovery energy, and the turn-ON energy is discussed.

   Robustness Investigation of SiC Power MOSFETs under Negative Temperatures
By Asad FAYYAZ [View]
[Download]

Abstract: Recent material technological advances for silicon carbide (SiC) have led to a wide selection of commercial SiC power transistors, especially MOSFETs, from various manufacturers and hence it is vital to have these devices thoroughly characterized under different test conditions representative of power electronics applications. This paper aims to present an experimental characterization under negative temperature of commercially available SiC Power MOSFETs in order to assess their robustness. Devices were tested during short circuit (SC) and unclamped inductive switching (UIS) conditions.

   SiC MOSFETs for Future Motor Drive Applications
By Subhadra TIWARI [View]
[Download]

Abstract: This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double pulse methodology. The conduction losses from the datasheet and the switching energy losses obtained from the laboratory measurements are used as a look up table input when simulating the detailed inverter losses in a three-phase motor drive inverter. The total inverter loss is plotted for different switching frequencies in order to illustrate the performance improvement that SiC MOSFETs can bring over Si IGBTs for a motor drive inverter from the efficiency point of view. The overall analysis gives an insight into how SiC MOSFET outperforms Si IGBT over all switching frequency ranges with the advantages becoming more pronounced at higher frequencies and temperatures.

   System Study of SiC MOSFET and Si IGBT Power Module Performance using a Bidirectional Buck-Boost Converter as Evaluation Platform
By Maximilian SLAWINSKI [View]
[Download]

Abstract: This paper presents the results of a system study comparing a SiC MOSFET and a Si IGBT power module on a DC/DC power conversion system level. The target of this study is the evaluation of a reduced cooling effort as well as the reduction of inductor sizes by the use of high efficient SiC switches. Therefore a conversion performance target have been defined which have to be fulfilled by the SiC and Si based power conversion system. Lower static and dynamic power losses of the SiC MOSFET based system allow a much higher switching frequency as the Si IGBT based system. As a result magnetics and capacitors of the SiC MOSFET module based system a much smaller and cheaper as for the Si IGBT system. A further reduction of the conversion losses could be achieved by the use of synchronous rectification enabled by the integrated body diodes of the SiC MOSFETs used in this work. The results of this study show the potential of SiC MOSFET modules on a system level in terms of power density, conversion performance and the reduction of system costs.

EPE 2016 - DS1a: Active Components and New Materials
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - DS1a: Active Components and New Materials
	[return to parent folder]

	A Galvanically Isolated Gate Driver with Low Coupling Capacitance for Medium Voltage SiC MOSFETs By Jan GOTTSCHLICH	[View] [Download]
Abstract: This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A lowcommon mode coupling capacity of 1 pF and good electrical insulation of the power supply are achievedby using a current-loop AC-bus power supply. The SiC MOSFET is protected against unintentionalself-turn-on by a low resistance gate short-circuit that is active while the gate driver is not powered.

	A novel gate control strategy for 3.4kV cascade SiC MOSFETs stack By Yu REN	[View] [Download]
Abstract: Several topologies of high voltage input DC/DC power supply are investigated firstly in this paper and then a novel gate control strategy for cascade SiC MOSFET stack using a single standard gate driver is proposed. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation results validate the analysis and show the availability of the proposed topology. At last 3.4KV cascade SiC MOSFET stack prototype has been designed and fabricated, the experimental results under double-pulse-test validate the proposed gate driver strategy. The proposed gate driver strategy is suitable to not only the SiC device but also the Si device.

	Advanced gate driver for IGBT devices with dv/dt and peak voltage limitation based on active gate-emitter voltage control By Martin HOEER	[View] [Download]
Abstract: An advanced gate drive unit for 1.2 kV IGBT modules has been developed. It includes two main features: limitation of the collector-emitter voltage slope and of the collector-emitter peak voltage. This is achieved through a feedback loop with a capacitive/resistive voltage divider coupled to the gate-emitter voltage of the IGBT. For the studied case a reduction of the switching losses of around 25\% is achieves. An experimental veri_cation and comparison to a commercially available gate drive unit with active clamping based on a series connections of TVS diodes is presented. The proposed gate drive unit can be used in applications with high stray inductance to ensure optimum switching behaviour of every switching transient.

	Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation By Dinh Lam DANG	[View] [Download]
Abstract: 4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range-30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart arecompared and explained. A physics-based analytical model for SiC MOSFET has been developed byusing the MAST language and simulated with SABER. The influences of the geometry (short channeleffects), channel mobility, temperature and the threshold voltage on transistor properties have beentaken into account. The parameters used to define the device were extracted from measurements usingMATLAB and datasheet.

	Comparative Electrothermal Analysis between SiC Schottky and Silicon PiN Diodes: Paralleling and Thermal Considerations By Ji HU	[View] [Download]
Abstract: In power modules with high current ratings where several devices are required for parallelconnection, electrothermal balance between the parallel devices is a very important consideration. Thispaper investigates the impact of electrothermal imbalance between parallel connected devices on thethermal stability of the parallel pair. Under investigation are parallel connected 600 V silicon PiN andsilicon carbide Schottky diodes. The electrothermal imbalance between the parallel devices wasintroduced by setting different initial junction temperatures and using different thermal boundaryconditions i.e. different case temperatures. The effect of the diode technology on the thermal stresses ofthe complementing transistor is also assessed. The results show that silicon PiN diodes operate at lowerjunction temperatures because of the higher zero-temperature coefficient points in the forward currentcharacteristics, however, the complementing MOSFETs are more thermally stressed since the reverserecovery of the diode causes current overshoots in the complementing transistor. It is also shown thatSiC Schottky diodes exhibit more electrothermally stable operation under electrothermal imbalancewhen connected in parallel. Parallel connected SiC Schottky diodes with different initial junctiontemperatures and different thermal boundary conditions (case temperatures) exhibit better temperatureconvergence/stability compared to silicon PiN diodes. The temperature convergence in parallel SiCSchottky diode pairs is due to the lower Zero-Temperature Coefficient (ZTC) point compared with thePiN diode pairs, which means more equal current sharing in parallel SiC diodes.

	Current Imbalance affected by Self Turn-On during Turn-On of paralleled HV-IGBTs By Patrick MUENSTER	[View] [Download]
Abstract: The Self Turn-ON of IGBTs leads to an increased turn-ON speed. As far as IGBTs with different thresholdvoltages are paralleled, collector current imbalances, during turn-ON, may occur. The intensity ofimbalance depends on the used gate-drive topology, influenced by the Self Turn-ON.

	Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load By Matthias SPANG	[View] [Download]
Abstract: Inhomogeneous current sharing between parallel IGBTs can compromise the capability of power modules to withstand short circuit events. Especially if the gate voltages are influenced by coupling effects, single IGBTs will carry excessive currents. This paper analyzes the effects of different parameters on the maximum short circuit current of a 1.7kV power module composed of three parallel half bridge units with unsymmetrically connected load. Numerical simulations based on the module geometry are performed and compared to short circuit measurements. Measures for improvement in current sharing are discussed.

	Current-Direction Detection for Static MOS-Control of the BIGT in the Three-Level Neutral-Point-Clamped Converter By Sidney GIERSCHNER	[View] [Download]
Abstract: The gate-emitter voltageVGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode. While for conventional IGBT with antiparallel free-wheeling diode VGE is at 15V regardless of current direction, it has to be adapted for the BIGT. The gate-emitter voltage VGE has to be below threshold voltage, in order to operate at low static losses in diode forward-conduction mode. This paper proposes an optimised gate control based on the direction of the load current for a three-phase three-level converter.

	Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model By Andreas MAERZ	[View] [Download]
Abstract: In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs.

	High Performance 1700V IGBT Module with the 7th Generation Chipset/Package Technologies By Mutsumi SAWADA	[View] [Download]
Abstract: This paper describes 1700V IGBT module with the 7th generation (7G) IGBT technologies. Byfurther improvement of the chip characteristics and the development of new high reliability packagematerials and technologies, the performance of the modules are significantly improved.In addition, an extra thermal performance of lower thermal impedance is achieved with successfulimplementation of novel enhanced strength AlN isolation substrate. The integration of new chip andpackage technologies make it possible to achieve significant increase of watts density of about 30\%(11.2kW/cm2 (6G) -> 14.4kW/cm2 (7G))

	Meta-parameterisation of Power Semiconductor Devices for Studies of Efficiency and Power Density in High Power Converters By Rene A. BARRERA-CARDENAS	[View] [Download]
Abstract: This paper presents a meta-parameterised approach for evaluation of power switch modules (PSMs) in high power converters (HPCs). General models and parameters for evaluation of power losses and volume of PSMs are presented. Then, meta-parameterisation is performed for the High Power Semiconductor Devices (HPSDs) that are commonly used in HPCs, considering two types of package, press-pack and module type, and including IGBT, IGCT and IEGT chip technologies. A comparative analysis based on current capability and its dependency with the frequency in voltage source converters is introduced for the considered HPSD technologies. Press-pack IGBT technology shows the higher current capability and power dissipation performance, so it can be good choice for increase the operative frequency in HPCs.

	Plasma Dynamic of RC-IGBT during Desaturation Pulses By Holger WIENCKE	[View] [Download]
Abstract: Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode.This can be utilized to put the device in a low saturation mode during conduction in diode directionand to reduce the charge before reverse-recovery. [1]This paper gives an insight into the plasma modulation during the desaturation time and the lock timeof RC-IGBTs in diode mode. The influence of these two parameters on the reverse-recovery current,the reverse-recovery energy, and the turn-ON energy is discussed.

	Robustness Investigation of SiC Power MOSFETs under Negative Temperatures By Asad FAYYAZ	[View] [Download]
Abstract: Recent material technological advances for silicon carbide (SiC) have led to a wide selection of commercial SiC power transistors, especially MOSFETs, from various manufacturers and hence it is vital to have these devices thoroughly characterized under different test conditions representative of power electronics applications. This paper aims to present an experimental characterization under negative temperature of commercially available SiC Power MOSFETs in order to assess their robustness. Devices were tested during short circuit (SC) and unclamped inductive switching (UIS) conditions.

	SiC MOSFETs for Future Motor Drive Applications By Subhadra TIWARI	[View] [Download]
Abstract: This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double pulse methodology. The conduction losses from the datasheet and the switching energy losses obtained from the laboratory measurements are used as a look up table input when simulating the detailed inverter losses in a three-phase motor drive inverter. The total inverter loss is plotted for different switching frequencies in order to illustrate the performance improvement that SiC MOSFETs can bring over Si IGBTs for a motor drive inverter from the efficiency point of view. The overall analysis gives an insight into how SiC MOSFET outperforms Si IGBT over all switching frequency ranges with the advantages becoming more pronounced at higher frequencies and temperatures.

	System Study of SiC MOSFET and Si IGBT Power Module Performance using a Bidirectional Buck-Boost Converter as Evaluation Platform By Maximilian SLAWINSKI	[View] [Download]
Abstract: This paper presents the results of a system study comparing a SiC MOSFET and a Si IGBT power module on a DC/DC power conversion system level. The target of this study is the evaluation of a reduced cooling effort as well as the reduction of inductor sizes by the use of high efficient SiC switches. Therefore a conversion performance target have been defined which have to be fulfilled by the SiC and Si based power conversion system. Lower static and dynamic power losses of the SiC MOSFET based system allow a much higher switching frequency as the Si IGBT based system. As a result magnetics and capacitors of the SiC MOSFET module based system a much smaller and cheaper as for the Si IGBT system. A further reduction of the conversion losses could be achieved by the use of synchronous rectification enabled by the integrated body diodes of the SiC MOSFETs used in this work. The results of this study show the potential of SiC MOSFET modules on a system level in terms of power density, conversion performance and the reduction of system costs.