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Current-Direction Detection for Static MOS-Control of the BIGT in the Three-Level Neutral-Point-Clamped Converter
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| Author(s) |
Sidney GIERSCHNER |
| Abstract |
The gate-emitter voltageVGE affects the ON-state characteristics of the BIGT in diode forward-conduction mode. While for conventional IGBT with antiparallel free-wheeling diode VGE is at 15V regardless of current direction, it has to be adapted for the BIGT. The gate-emitter voltage VGE has to be below threshold voltage, in order to operate at low static losses in diode forward-conduction mode. This paper proposes an optimised gate control based on the direction of the load current for a three-phase three-level converter. |
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| Filename: | 0003-epe2016-full-07260362.pdf |
| Filesize: | 1.154 MB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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