| Filename: | 0045-epe2016-full-15515802.pdf |
| Filesize: | 896.7 KB |
| Current Imbalance affected by Self Turn-On during Turn-On of paralleled HV-IGBTs | ||||||
| Author(s) | Patrick MUENSTER | |||||
| Abstract | The Self Turn-ON of IGBTs leads to an increased turn-ON speed. As far as IGBTs with different thresholdvoltages are paralleled, collector current imbalances, during turn-ON, may occur. The intensity ofimbalance depends on the used gate-drive topology, influenced by the Self Turn-ON. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2017-04-13 by System | |||||
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