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A Galvanically Isolated Gate Driver with Low Coupling Capacitance for Medium Voltage SiC MOSFETs
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| Author(s) |
Jan GOTTSCHLICH |
| Abstract |
This paper presents a galvanically isolated gate driver system for medium voltage SiC-MOSFETs. A lowcommon mode coupling capacity of 1 pF and good electrical insulation of the power supply are achievedby using a current-loop AC-bus power supply. The SiC MOSFET is protected against unintentionalself-turn-on by a low resistance gate short-circuit that is active while the gate driver is not powered. |
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| Filename: | 0521-epe2016-full-23361231.pdf |
| Filesize: | 1.062 MB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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