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Characterization and analytical modeling of 4H-SiC VDMOSFET in the forward operation
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| Author(s) |
Dinh Lam DANG |
| Abstract |
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range-30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart arecompared and explained. A physics-based analytical model for SiC MOSFET has been developed byusing the MAST language and simulated with SABER. The influences of the geometry (short channeleffects), channel mobility, temperature and the threshold voltage on transistor properties have beentaken into account. The parameters used to define the device were extracted from measurements usingMATLAB and datasheet. |
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| Filename: | 0517-epe2016-full-19431723.pdf |
| Filesize: | 258.3 KB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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