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Explaining the short-circuit capability of SiC MOSFETs by using a simple thermal transmission-line model
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| Author(s) |
Andreas MAERZ |
| Abstract |
In this paper the short-circuit robustness of state of the art SiC MOSFETs is analysed and their short-circuit behaviour is compared to that of a modern IGBT. A simplified thermal model of the chip itself is used to explain the difference between the behaviour of IGBT and SiC MOSFET under short-circuit conditions. Further, this model is used to derive the requirements for short-circuit detection methods for SiC MOSFETs. |
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| Filename: | 0044-epe2016-full-13402718.pdf |
| Filesize: | 1.503 MB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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