| |
Advanced gate driver for IGBT devices with dv/dt and peak voltage limitation based on active gate-emitter voltage control
| [View]
[Download]
|
| Author(s) |
Martin HOEER |
| Abstract |
An advanced gate drive unit for 1.2 kV IGBT modules has been developed. It includes two main features: limitation of the collector-emitter voltage slope and of the collector-emitter peak voltage. This is achieved through a feedback loop with a capacitive/resistive voltage divider coupled to the gate-emitter voltage of the IGBT. For the studied case a reduction of the switching losses of around 25\% is achieves. An experimental veri_cation and comparison to a commercially available gate drive unit with active clamping based on a series connections of TVS diodes is presented. The proposed gate drive unit can be used in applications with high stray inductance to ensure optimum switching behaviour of every switching transient. |
| Download |
| Filename: | 0081-epe2016-full-10390303.pdf |
| Filesize: | 189 KB |
|
| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
| |
 |