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Plasma Dynamic of RC-IGBT during Desaturation Pulses
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Author(s) |
Holger WIENCKE |
Abstract |
Reverse-conducting IGBTs (RC-IGBTs) allow the modulation of plasma concentration in diode mode.This can be utilized to put the device in a low saturation mode during conduction in diode directionand to reduce the charge before reverse-recovery. [1]This paper gives an insight into the plasma modulation during the desaturation time and the lock timeof RC-IGBTs in diode mode. The influence of these two parameters on the reverse-recovery current,the reverse-recovery energy, and the turn-ON energy is discussed. |
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Filename: | 0321-epe2016-full-11432649.pdf |
Filesize: | 999.3 KB |
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Type |
Members Only |
Date |
Last modified 2017-04-13 by System |
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