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A novel gate control strategy for 3.4kV cascade SiC MOSFETs stack
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| Author(s) |
Yu REN |
| Abstract |
Several topologies of high voltage input DC/DC power supply are investigated firstly in this paper and then a novel gate control strategy for cascade SiC MOSFET stack using a single standard gate driver is proposed. Thereafter, operation principles including both static sate and switching transitions are analyzed. The LTspice simulation results validate the analysis and show the availability of the proposed topology. At last 3.4KV cascade SiC MOSFET stack prototype has been designed and fabricated, the experimental results under double-pulse-test validate the proposed gate driver strategy. The proposed gate driver strategy is suitable to not only the SiC device but also the Si device. |
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| Filename: | 0319-epe2016-full-03542482.pdf |
| Filesize: | 1.149 MB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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