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Current sharing between parallel IGBTs in power modules during short circuit with unsymmetrically connected load
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| Author(s) |
Matthias SPANG |
| Abstract |
Inhomogeneous current sharing between parallel IGBTs can compromise the capability of power modules to withstand short circuit events. Especially if the gate voltages are influenced by coupling effects, single IGBTs will carry excessive currents. This paper analyzes the effects of different parameters on the maximum short circuit current of a 1.7kV power module composed of three parallel half bridge units with unsymmetrically connected load. Numerical simulations based on the module geometry are performed and compared to short circuit measurements. Measures for improvement in current sharing are discussed. |
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| Filename: | 0172-epe2016-full-15125321.pdf |
| Filesize: | 1.957 MB |
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| Type |
Members Only |
| Date |
Last modified 2017-04-13 by System |
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