EPE Association: EPE 1995 - 33 - Dialogue Session DS3a: Devices, Components and Materials (III)

EPE 1995 - 33 - Dialogue Session DS3a: Devices, Components and Materials (III)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 33 - Dialogue Session DS3a: Devices, Components and Materials (III)

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   TEMPERATURE NON CONTACT MEASUREMENTS ON THE SURFACE OF A GTO THYRISTOR IN COMMUTATION
By R. Abid; F. Misery [View]
[Download]

Abstract: A temperature measurement non contact technique based on thermoreflectivity of oxidized silicon is presented. It is dedicated to power electron devices. The size of the optical probe is 20 micrometers, and the smallest temperature variation that can be detected is 10°C. The study of the temperature variation versus energy E dissipated during turn-off is performed on the surface of the gate-cathode junction in a 1,200 V GTO thyristor.

   THE REVERSE BEHAVIOUR OF THE NPT-IGBT IN ITS ON-STATE
By T. Franke; P. Türkes; Y. Gerstenmaier [View]
[Download]

Abstract: Following the investigation of stresses in IGBTs in inverter circuits, a detailed description of reverse behaviour of the NPT-IGBT is given. The stored charge of the IGBT will be pointed out as an essential property characterizing the IGBT in concrete commutation conditions. Internal voltages, currents and carrier densities will be extracted from the transient behaviour of the IGBT in its on-state. They will be used to develop a simplified equivalent circuit for the reverse biased IGBT. A simple test circuit will be disclosed. In order to help designers measurements are shown describing the switching of IGBT at low reverse stress.

   Current Sensing Characteristics of IGBTs under Short Circuit Conditions
By Z. J. Shen; S. P. Robb; A. Taomoto [View]
[Download]

Abstract: In this paper, a 600 V / 100 A IGBT with integrated current sensor is designed and fabricated. The IGBT demonstrates low conduction loss and high switching speed as well as excellent shortcircuit withstanding capability. The integrated current sensor provides feedback information for closeloop operations and/or over-current protection of the IGBT. The current sensing characteristics of the IGBT under short circuit conditions is investigated in details to provides information for circuit designers to use the device in power electronic systems.

   A HIGH FREQUENCY SMART POWER MOSFET SWITCH FOR USE IN HALF-BRIDGE CIRCUITS
By R.J. Leedham; D.R.H. Carter; R.A. McMahon [View]
[Download]

Abstract: An integrated smart power switch, incorporating both a high speed gate driver and power MOSFET, has been designed for use at up to 13.56MHz. The power MOSFET is specified for use in off-line converters with power outputs of up to 200W, with an on-state resistance of 2.5 OMega and breakdown voltage of 500V. Simulations of the gate driver predict rise & fall times of 3ns on the gate of the power MOSFET and a propagation delay of 11ns.

   OPTIMIZATION OF THE SHORT-CIRCUIT BEHAVIOUR OF NPT-IGBT BY THE GATE DRIVE
By H.-G. Eckel; L. Sack [View]
[Download]

Abstract: Short-circuit withstand capability is an important feature for IGBT in inverter applications. With NPT-IGBT, the stress for the device is especially high if the short-circuit occurs while the device is carrying current (short-circuit type II). In this case, a high current peak and a large overvoltage can occur. In this paper, a model for the dependence of the current and voltage stress of a NPT-IGBT is given. It shows that the voltage stress is especially high for IGBT with a high rated current. A new gate drive concept, the di/dt controlled gate clamping, that reduces the current and the overvoltage is investigated on. This gate drive concept is combined with a concept for turn-off of the steady-state short-circuit. Experimental results show that safe operation in any short-circuit situation is possible.

   FUNCTIONAL INTEGRATION OF POWER DEVICES: A NEW APPROACH
By Robert Pezzani; Jean Baptiste Quoirin [View]
[Download]

Abstract: This paper reviews an innovative approach enabling to integrate power electronic devices such as thyristors, diodes etc ... The proposed concept, well adapted for bidirectional behaviour, allows, for example, the conception of circuits for handling AC current from the mains. The Authors describe the features of this approach and give several examples

   LINEAR VARIABLE INDUCTOR IN POWER-PROCESSING APPLICATIONS
By A. S. Kislovski; R. Redl [View]
[Download]

Abstract: The linear variable inductor (LVI) is applied in increasing number of new power electronics applications. The material and the shape of the core used and the way the ac and the bias windings are implemented determine the cost of the LVI and the ratio of the maximal to the minjmal inductance of the LVI. The results obtained with different realizations are presented. This information is helpful in design of this versatile magnetic component.

   ENERGY ABSORPTION DEVICES FOR SOLID STATE INTERRUPTION
By J.M. Li; X. Tian; D. Lafore [View]
[Download]

Abstract: A Solid state contactor or circuit breaker consists of three main elements: a low on-state voltage main power semiconductor, an energy absorption device (ZnO varistors in general) and a snubber ("C" or "RCD") which is only necessary for power devices having limited RBSOA. ZnO varistors have high peak current and energy absorption capabilities. However they give not only high clamping factor but also voltage spike at the beginning of clamping, thereby greatly increasing the requirement in main power switch breakdown voltage. In this paper, we propose an "active energy absorption device" which allows controllable clamping factor and constant clamping voltage and does not have the ZnO's voltage spike. Therefore it can be another alternative for energy dissipation in solid state interruption. The proposed device can also be associated with ZnO varistors to achieve a combined device enabling high clamping performance as well as high energy dissipation capability.

   A NEW METHOD FOR THE MEASUREMENT OF THE CONDUCTIVITY MOBILITY AS A FUNCTION OF INJECTION LEVEL IN SILICON REGIONS
By S. Bellone; G. V. Persiano; A. G. M. Strollo; S. Daliento [View]
[Download]

Abstract: A new approach to measure the conductivity mobility dependence on the injection level is proposed. The technique also allows to explore the influence of the carrier-carrier scattering mechanism on the electron and hole mobility separately overcoming most of the limitations of other methods available in literature. Two-dimensional numerical simulation is used to asses the accuracy of the proposed measurement technique. Experimental results obtained on both n-type and p-type epitaxial regions are presented and compared to existing analytical mobility models.

   An SOl Lateral BMFET for Power IC Applications
By S. D. Kim; J. H. Kim; C. M. Yun; M. K. Han; Y. I. Choi [View]
[Download]

Abstract: An SOl lateral BMFET with normally-off characteristics is proposed and verified by the numerical simulation. The vertical diffusion depth of the p+ gate junction provides a lateral JFET channel on the buried oxide layer. A large potential barrier height of the channel region is induced by controlling the channel depth, the buried oxide thickness. and the doping concentration of n drift region. The effect of potential barrier on the blocking characteristics and the DC current gain is systematically investigated. The numerical simulation result shows that the device characteristics such as the breakdown voltage, the current gain and the transient behavior may be improved by optimization of the doping concentration in the drift region.

   A New Power MOSFET with Self Current Limiting Capability
By C. M. Yun; S. D. Kim; M. K. Han; Y. I. Choi [View]
[Download]

Abstract: A new power MOSFET with self current limiting capability is proposed. The MOSFET consists of main power cell, sensing cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the pinched resistor of the npn transistor and sensing voltage at the pinched base resistor is less than 0.7 V so that the drainsource voltage of the sensing and the main power MOSFET is nearly identical. The limiting current level is adjusted easily by an external resistor. Simulation results show that the onresistance of the power MOSFET is not deteriorated by the sensing and protection circuit. Overcurrent protection is achieved successfully with a small protection area.

   A 2A / 25V MONOLITHIC SWITCHING CELL FOR SMART POWER APPLICATION
By F. H. Behrens; S. Fineo; J. Guilherme; M. I. Castro Simas [View]
[Download]

Abstract: This paper presents a smart power switching cell to be fabricated with standard CMOS technologies, in view to obtain a versatile, high performance and low cost basic building block, suitable for a wide range of low power applications. This cell implements a low-side/high-side transistor configuration which can be merged together with low voltage control and protection circuits, rated at up to 20W. Transistors are based on the lightly doped drain concept to attain breakdown voltages far beyond the conventional ones. The optimization of the basic cell was carried out with the support of the two-dimensional device simulator SPISCES. Experimental results on different topologies show its applicability on portable systems power supplies. Their performance proves the ability of standard CMOS technologies to implement smart power circuits.

   A Circuit Level Simulation Model of the IGBT
By Angelo Brambilla; Enrico Dallago [View]
[Download]

Abstract: In this paper a circuit level model of the Insulated Gate Bipolar Transistor is presented. It was developed starting from the model of pnpn structure and the model equations of a power MOSFET. The proposed model considers the main factors influencing the characteristics of the IGBT such as the n- layer effects, the non linear junction capacitances, the Miller capacitance and the tail current. The paper presents the model equations and parameters. Validation tests on the electrical characteristics of the model are reported and discussed.

   HARD AND SOFT SWITCHING BEHAVIOUR OF A NEW BIPOLAR CASCODE MONOLITHIC SWITCH
By S. Musumeci; G. Oriti; A. Raciti; A. Testa; M. Melito; A. Galluzzo [View]
[Download]

Abstract: In this paper a Bipolar- Power MOSFET cascode monolithic device, realized in ST-SGS Thomson VIPower™ (Vertical Intelligent Power) Technology called M3, is presented. The basic device features a three-stage deep-base NPN BJT and a vertical Power MOSFET, realized inside the emitter of the trilinton output stage itself, for emitter switching. The paper starts with a survey of the main characteristics of the SGS-Thomson Vertical Intelligent Power technology. Then the switching performance of the device are analyzed in Hard-Switching and Soft-Switching Mode. Finally the device performance in a DC-DC converter are tested.

   Modelling of a fully integrated light triggered thyristor with built-in self-protection
By P.A. Mawby; J. Zeng; M.S. Towers; D. Crees [View]
[Download]

Abstract: This paper presents the modelling of a fully integrated light triggered thyristor with self-protection. A two-dimensional simulator with cylindrical co-orinates is used for this task. The SFZ concept is investigated in detail, by varying the key features associated with this structure. The effects of the anti-conductivity modulation ring is also investigated.

   APPLICATION OF DIAMOND-LIKE LAYERS AS PASSIVATION AND ISOLATION LAYERS IN POWER SEMICONDUCTOR DEVICES
By Z. Lisik; S. Mitura; J. Szmidt [View]
[Download]

Abstract: Diamond-like carbon (DLC) layers, due to their properties, can act as very attractive material for microelectronics technology. In particular, they can be used to create protection and passivation layers in power semiconductors. In the contribution the investigations concerning such an application of the DLC layers in manufacturing of a power fast thyristor are presented. Two applications are considered as a passivation coating for both junctions of n-base and as a protection layer deposited on gate contact at. cathode side of the thyristor. Since the properties of DLC layer strongly depend on the technology, the used technology process as well as technology apparatus are described as well.

   3-D SIMULATION OF HEAT TRANSFER IN POWER SEMICONDUCTOR DEVICES
By Z. Lisik; M. Kopec; J. Podgorski; R. Barczewski [View]
[Download]

Abstract: [n the contribution a 3-D approach to heat transfer in power semiconductor devices is shown. It consists in developing the well known Rth, Cth idea to create 3-D software for modelling the heat flow in the whole of the power semiconductor device. The algorithms which allow to create an Rth, Cth net covering the whole device and to find the temperature distribution as well as some results of simulation performed for a transistor in TO-126 case are presented.

   OPTIMISATION OF 1000V EPITAXIAL IGBT DEVICE FOR A 2KW ZERO CURRENT RESONANT CONVERTER
By L. Fragapane; R. Letor; F. Saya [View]
[Download]

Abstract: The aim of this work was to design a new application-oriented IGBT. The device structure was considered as a part of a 2kW ZCQR resonant converter. The key characteristics of the IGBT are the intrinsic gate resistance, and the lifetime of the minority carriers in the EPY layer. The first parameter can be drastically reduced with a suitable design lay-out of the chip, while the lifetime was considered a critical parameter to be optimised according to the requirements of the application. The IGBT does not have zero losses at zero current turn-off - they are related to the recombination time of minority carriers in the base of intrinsic PNP, and so it is necessary to trade-off static and dynamic parameters. This paper investigates methods of reducing power losses due to the effects of the PNP transistor and shows how a correctly adjusted lifetime makes a 1000V epitaxial IGBT suitable for operation at high current and high frequency.

   AN INTEGRATED APPROACH TO MOS-GATED POWER SEMICONDUCTOR MANUFACTURING BASED ON CLEANER PRODUCTION TECHNOLOGIES FOR WASTE MINIMIZATION BY DESIGN
By S. Anderson; F. Balkau; B. Almesfer [View]
[Download]

Abstract: Mos-Gated Power Semiconductors are enabling technologies for "efficient end-use" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.

   LAST IMPROVEMENTS OF INTELLIGENT POWER MODULES FOR MOTOR DRIVE
By D. Medaule; G. Majumdar [View]
[Download]

Abstract: This paper introduces a completely new generation of power module series, called ASIPM. (Application Specific IPM), which covers 0.1 kW through 1.5 kW drive capability. These devices contribute further miniaturisation and higher performance features to its application systems. As these devices have been developed through various process of optimisation related to >IGBT chip, Free-wheel diode chip, main controller HVIC circuitry and process technologies, packaging structure, etc., these promise high-level cost-to-performance feature to the next generation application systems. This paper explains the aspects of internal system design and key-technologies involved together with numerous functions and features of the new ASIPM series.

EPE 1995 - 33 - Dialogue Session DS3a: Devices, Components and Materials (III)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1995 - Conference > EPE 1995 - 33 - Dialogue Session DS3a: Devices, Components and Materials (III)
	[return to parent folder]

	TEMPERATURE NON CONTACT MEASUREMENTS ON THE SURFACE OF A GTO THYRISTOR IN COMMUTATION By R. Abid; F. Misery	[View] [Download]
Abstract: A temperature measurement non contact technique based on thermoreflectivity of oxidized silicon is presented. It is dedicated to power electron devices. The size of the optical probe is 20 micrometers, and the smallest temperature variation that can be detected is 10°C. The study of the temperature variation versus energy E dissipated during turn-off is performed on the surface of the gate-cathode junction in a 1,200 V GTO thyristor.

	THE REVERSE BEHAVIOUR OF THE NPT-IGBT IN ITS ON-STATE By T. Franke; P. Türkes; Y. Gerstenmaier	[View] [Download]
Abstract: Following the investigation of stresses in IGBTs in inverter circuits, a detailed description of reverse behaviour of the NPT-IGBT is given. The stored charge of the IGBT will be pointed out as an essential property characterizing the IGBT in concrete commutation conditions. Internal voltages, currents and carrier densities will be extracted from the transient behaviour of the IGBT in its on-state. They will be used to develop a simplified equivalent circuit for the reverse biased IGBT. A simple test circuit will be disclosed. In order to help designers measurements are shown describing the switching of IGBT at low reverse stress.

	Current Sensing Characteristics of IGBTs under Short Circuit Conditions By Z. J. Shen; S. P. Robb; A. Taomoto	[View] [Download]
Abstract: In this paper, a 600 V / 100 A IGBT with integrated current sensor is designed and fabricated. The IGBT demonstrates low conduction loss and high switching speed as well as excellent shortcircuit withstanding capability. The integrated current sensor provides feedback information for closeloop operations and/or over-current protection of the IGBT. The current sensing characteristics of the IGBT under short circuit conditions is investigated in details to provides information for circuit designers to use the device in power electronic systems.

	A HIGH FREQUENCY SMART POWER MOSFET SWITCH FOR USE IN HALF-BRIDGE CIRCUITS By R.J. Leedham; D.R.H. Carter; R.A. McMahon	[View] [Download]
Abstract: An integrated smart power switch, incorporating both a high speed gate driver and power MOSFET, has been designed for use at up to 13.56MHz. The power MOSFET is specified for use in off-line converters with power outputs of up to 200W, with an on-state resistance of 2.5 OMega and breakdown voltage of 500V. Simulations of the gate driver predict rise & fall times of 3ns on the gate of the power MOSFET and a propagation delay of 11ns.

	OPTIMIZATION OF THE SHORT-CIRCUIT BEHAVIOUR OF NPT-IGBT BY THE GATE DRIVE By H.-G. Eckel; L. Sack	[View] [Download]
Abstract: Short-circuit withstand capability is an important feature for IGBT in inverter applications. With NPT-IGBT, the stress for the device is especially high if the short-circuit occurs while the device is carrying current (short-circuit type II). In this case, a high current peak and a large overvoltage can occur. In this paper, a model for the dependence of the current and voltage stress of a NPT-IGBT is given. It shows that the voltage stress is especially high for IGBT with a high rated current. A new gate drive concept, the di/dt controlled gate clamping, that reduces the current and the overvoltage is investigated on. This gate drive concept is combined with a concept for turn-off of the steady-state short-circuit. Experimental results show that safe operation in any short-circuit situation is possible.

	FUNCTIONAL INTEGRATION OF POWER DEVICES: A NEW APPROACH By Robert Pezzani; Jean Baptiste Quoirin	[View] [Download]
Abstract: This paper reviews an innovative approach enabling to integrate power electronic devices such as thyristors, diodes etc ... The proposed concept, well adapted for bidirectional behaviour, allows, for example, the conception of circuits for handling AC current from the mains. The Authors describe the features of this approach and give several examples

	LINEAR VARIABLE INDUCTOR IN POWER-PROCESSING APPLICATIONS By A. S. Kislovski; R. Redl	[View] [Download]
Abstract: The linear variable inductor (LVI) is applied in increasing number of new power electronics applications. The material and the shape of the core used and the way the ac and the bias windings are implemented determine the cost of the LVI and the ratio of the maximal to the minjmal inductance of the LVI. The results obtained with different realizations are presented. This information is helpful in design of this versatile magnetic component.

	ENERGY ABSORPTION DEVICES FOR SOLID STATE INTERRUPTION By J.M. Li; X. Tian; D. Lafore	[View] [Download]
Abstract: A Solid state contactor or circuit breaker consists of three main elements: a low on-state voltage main power semiconductor, an energy absorption device (ZnO varistors in general) and a snubber ("C" or "RCD") which is only necessary for power devices having limited RBSOA. ZnO varistors have high peak current and energy absorption capabilities. However they give not only high clamping factor but also voltage spike at the beginning of clamping, thereby greatly increasing the requirement in main power switch breakdown voltage. In this paper, we propose an "active energy absorption device" which allows controllable clamping factor and constant clamping voltage and does not have the ZnO's voltage spike. Therefore it can be another alternative for energy dissipation in solid state interruption. The proposed device can also be associated with ZnO varistors to achieve a combined device enabling high clamping performance as well as high energy dissipation capability.

	A NEW METHOD FOR THE MEASUREMENT OF THE CONDUCTIVITY MOBILITY AS A FUNCTION OF INJECTION LEVEL IN SILICON REGIONS By S. Bellone; G. V. Persiano; A. G. M. Strollo; S. Daliento	[View] [Download]
Abstract: A new approach to measure the conductivity mobility dependence on the injection level is proposed. The technique also allows to explore the influence of the carrier-carrier scattering mechanism on the electron and hole mobility separately overcoming most of the limitations of other methods available in literature. Two-dimensional numerical simulation is used to asses the accuracy of the proposed measurement technique. Experimental results obtained on both n-type and p-type epitaxial regions are presented and compared to existing analytical mobility models.

	An SOl Lateral BMFET for Power IC Applications By S. D. Kim; J. H. Kim; C. M. Yun; M. K. Han; Y. I. Choi	[View] [Download]
Abstract: An SOl lateral BMFET with normally-off characteristics is proposed and verified by the numerical simulation. The vertical diffusion depth of the p+ gate junction provides a lateral JFET channel on the buried oxide layer. A large potential barrier height of the channel region is induced by controlling the channel depth, the buried oxide thickness. and the doping concentration of n drift region. The effect of potential barrier on the blocking characteristics and the DC current gain is systematically investigated. The numerical simulation result shows that the device characteristics such as the breakdown voltage, the current gain and the transient behavior may be improved by optimization of the doping concentration in the drift region.

	A New Power MOSFET with Self Current Limiting Capability By C. M. Yun; S. D. Kim; M. K. Han; Y. I. Choi	[View] [Download]
Abstract: A new power MOSFET with self current limiting capability is proposed. The MOSFET consists of main power cell, sensing cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the pinched resistor of the npn transistor and sensing voltage at the pinched base resistor is less than 0.7 V so that the drainsource voltage of the sensing and the main power MOSFET is nearly identical. The limiting current level is adjusted easily by an external resistor. Simulation results show that the onresistance of the power MOSFET is not deteriorated by the sensing and protection circuit. Overcurrent protection is achieved successfully with a small protection area.

	A 2A / 25V MONOLITHIC SWITCHING CELL FOR SMART POWER APPLICATION By F. H. Behrens; S. Fineo; J. Guilherme; M. I. Castro Simas	[View] [Download]
Abstract: This paper presents a smart power switching cell to be fabricated with standard CMOS technologies, in view to obtain a versatile, high performance and low cost basic building block, suitable for a wide range of low power applications. This cell implements a low-side/high-side transistor configuration which can be merged together with low voltage control and protection circuits, rated at up to 20W. Transistors are based on the lightly doped drain concept to attain breakdown voltages far beyond the conventional ones. The optimization of the basic cell was carried out with the support of the two-dimensional device simulator SPISCES. Experimental results on different topologies show its applicability on portable systems power supplies. Their performance proves the ability of standard CMOS technologies to implement smart power circuits.

	A Circuit Level Simulation Model of the IGBT By Angelo Brambilla; Enrico Dallago	[View] [Download]
Abstract: In this paper a circuit level model of the Insulated Gate Bipolar Transistor is presented. It was developed starting from the model of pnpn structure and the model equations of a power MOSFET. The proposed model considers the main factors influencing the characteristics of the IGBT such as the n- layer effects, the non linear junction capacitances, the Miller capacitance and the tail current. The paper presents the model equations and parameters. Validation tests on the electrical characteristics of the model are reported and discussed.

	HARD AND SOFT SWITCHING BEHAVIOUR OF A NEW BIPOLAR CASCODE MONOLITHIC SWITCH By S. Musumeci; G. Oriti; A. Raciti; A. Testa; M. Melito; A. Galluzzo	[View] [Download]
Abstract: In this paper a Bipolar- Power MOSFET cascode monolithic device, realized in ST-SGS Thomson VIPower™ (Vertical Intelligent Power) Technology called M3, is presented. The basic device features a three-stage deep-base NPN BJT and a vertical Power MOSFET, realized inside the emitter of the trilinton output stage itself, for emitter switching. The paper starts with a survey of the main characteristics of the SGS-Thomson Vertical Intelligent Power technology. Then the switching performance of the device are analyzed in Hard-Switching and Soft-Switching Mode. Finally the device performance in a DC-DC converter are tested.

	Modelling of a fully integrated light triggered thyristor with built-in self-protection By P.A. Mawby; J. Zeng; M.S. Towers; D. Crees	[View] [Download]
Abstract: This paper presents the modelling of a fully integrated light triggered thyristor with self-protection. A two-dimensional simulator with cylindrical co-orinates is used for this task. The SFZ concept is investigated in detail, by varying the key features associated with this structure. The effects of the anti-conductivity modulation ring is also investigated.

	APPLICATION OF DIAMOND-LIKE LAYERS AS PASSIVATION AND ISOLATION LAYERS IN POWER SEMICONDUCTOR DEVICES By Z. Lisik; S. Mitura; J. Szmidt	[View] [Download]
Abstract: Diamond-like carbon (DLC) layers, due to their properties, can act as very attractive material for microelectronics technology. In particular, they can be used to create protection and passivation layers in power semiconductors. In the contribution the investigations concerning such an application of the DLC layers in manufacturing of a power fast thyristor are presented. Two applications are considered as a passivation coating for both junctions of n-base and as a protection layer deposited on gate contact at. cathode side of the thyristor. Since the properties of DLC layer strongly depend on the technology, the used technology process as well as technology apparatus are described as well.

	3-D SIMULATION OF HEAT TRANSFER IN POWER SEMICONDUCTOR DEVICES By Z. Lisik; M. Kopec; J. Podgorski; R. Barczewski	[View] [Download]
Abstract: [n the contribution a 3-D approach to heat transfer in power semiconductor devices is shown. It consists in developing the well known Rth, Cth idea to create 3-D software for modelling the heat flow in the whole of the power semiconductor device. The algorithms which allow to create an Rth, Cth net covering the whole device and to find the temperature distribution as well as some results of simulation performed for a transistor in TO-126 case are presented.

	OPTIMISATION OF 1000V EPITAXIAL IGBT DEVICE FOR A 2KW ZERO CURRENT RESONANT CONVERTER By L. Fragapane; R. Letor; F. Saya	[View] [Download]
Abstract: The aim of this work was to design a new application-oriented IGBT. The device structure was considered as a part of a 2kW ZCQR resonant converter. The key characteristics of the IGBT are the intrinsic gate resistance, and the lifetime of the minority carriers in the EPY layer. The first parameter can be drastically reduced with a suitable design lay-out of the chip, while the lifetime was considered a critical parameter to be optimised according to the requirements of the application. The IGBT does not have zero losses at zero current turn-off - they are related to the recombination time of minority carriers in the base of intrinsic PNP, and so it is necessary to trade-off static and dynamic parameters. This paper investigates methods of reducing power losses due to the effects of the PNP transistor and shows how a correctly adjusted lifetime makes a 1000V epitaxial IGBT suitable for operation at high current and high frequency.

	AN INTEGRATED APPROACH TO MOS-GATED POWER SEMICONDUCTOR MANUFACTURING BASED ON CLEANER PRODUCTION TECHNOLOGIES FOR WASTE MINIMIZATION BY DESIGN By S. Anderson; F. Balkau; B. Almesfer	[View] [Download]
Abstract: Mos-Gated Power Semiconductors are enabling technologies for "efficient end-use" power conversion systems. The use of these technologies for energy savings offers an environmental benefit of reduction in carbon dioxide emissions if the primary energy source is fossil fuel based. The manufacturing of these technologies using clean production processes by design is discussed.

	LAST IMPROVEMENTS OF INTELLIGENT POWER MODULES FOR MOTOR DRIVE By D. Medaule; G. Majumdar	[View] [Download]
Abstract: This paper introduces a completely new generation of power module series, called ASIPM. (Application Specific IPM), which covers 0.1 kW through 1.5 kW drive capability. These devices contribute further miniaturisation and higher performance features to its application systems. As these devices have been developed through various process of optimisation related to >IGBT chip, Free-wheel diode chip, main controller HVIC circuitry and process technologies, packaging structure, etc., these promise high-level cost-to-performance feature to the next generation application systems. This paper explains the aspects of internal system design and key-technologies involved together with numerous functions and features of the new ASIPM series.