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A New Power MOSFET with Self Current Limiting Capability
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| Author(s) |
C. M. Yun; S. D. Kim; M. K. Han; Y. I. Choi |
| Abstract |
A new power MOSFET with self current limiting capability is proposed. The MOSFET consists of main power cell, sensing cell and lateral npn bipolar transistor. The proposed MOSFET may be fabricated by a conventional DMOS process without any additional fabrication step. Overcurrent state is sensed by the pinched resistor of the npn transistor and sensing voltage at the pinched base resistor is less than 0.7 V so that the drainsource voltage of the sensing and the main power MOSFET is nearly identical. The limiting current level is adjusted easily by an external resistor. Simulation results show that the onresistance of the power MOSFET is not deteriorated by the sensing and protection circuit. Overcurrent protection is achieved successfully with a small protection area. |
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| Filename: | Unnamed file |
| Filesize: | 414.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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