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A HIGH FREQUENCY SMART POWER MOSFET SWITCH FOR USE IN HALF-BRIDGE CIRCUITS
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| Author(s) |
R.J. Leedham; D.R.H. Carter; R.A. McMahon |
| Abstract |
An integrated smart power switch, incorporating both a high speed gate driver and power MOSFET, has been designed for use at up to 13.56MHz. The power MOSFET is specified for use in off-line converters with power outputs of up to 200W, with an on-state resistance of 2.5 OMega and breakdown voltage of 500V. Simulations of the gate driver predict rise & fall times of 3ns on the gate of the power MOSFET and a propagation delay of 11ns. |
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| Filename: | Unnamed file |
| Filesize: | 493.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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