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THE REVERSE BEHAVIOUR OF THE NPT-IGBT IN ITS ON-STATE
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| Author(s) |
T. Franke; P. Türkes; Y. Gerstenmaier |
| Abstract |
Following the investigation of stresses in IGBTs in inverter circuits, a detailed description of reverse behaviour of the NPT-IGBT is given. The stored charge of the IGBT will be pointed out as an essential property characterizing the IGBT in concrete commutation conditions. Internal voltages, currents and carrier densities will be extracted from the transient behaviour of the IGBT in its on-state. They will be used to develop a simplified equivalent circuit for the reverse biased IGBT. A simple test circuit will be disclosed. In order to help designers measurements are shown describing the switching of IGBT at low reverse stress. |
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| Filename: | Unnamed file |
| Filesize: | 347.8 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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