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An SOl Lateral BMFET for Power IC Applications
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| Author(s) |
S. D. Kim; J. H. Kim; C. M. Yun; M. K. Han; Y. I. Choi |
| Abstract |
An SOl lateral BMFET with normally-off characteristics is proposed and verified by the numerical simulation. The vertical diffusion depth of the p+ gate junction provides a lateral JFET channel on the buried oxide layer. A large potential barrier height of the channel region is induced by controlling the channel depth, the buried oxide thickness. and the doping concentration of n drift region. The effect of potential barrier on the blocking characteristics and the DC current gain is systematically investigated. The numerical simulation result shows that the device characteristics such as the breakdown voltage, the current gain and the transient behavior may be improved by optimization of the doping concentration in the drift region. |
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| Filename: | Unnamed file |
| Filesize: | 357.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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