| |
OPTIMISATION OF 1000V EPITAXIAL IGBT DEVICE FOR A 2KW ZERO CURRENT RESONANT CONVERTER
| [View]
[Download]
|
| Author(s) |
L. Fragapane; R. Letor; F. Saya |
| Abstract |
The aim of this work was to design a new application-oriented IGBT. The device structure was considered as a part of a 2kW ZCQR resonant converter. The key characteristics of the IGBT are the intrinsic gate resistance, and the lifetime of the minority carriers in the EPY layer. The first parameter can be drastically reduced with a suitable design lay-out of the chip, while the lifetime was considered a critical parameter to be optimised according to the requirements of the application. The IGBT does not have zero losses at zero current turn-off - they are related to the recombination time of minority carriers in the base of intrinsic PNP, and so it is necessary to trade-off static and dynamic parameters. This paper investigates methods of reducing power losses due to the effects of the PNP transistor and shows how a correctly adjusted lifetime makes a 1000V epitaxial IGBT suitable for operation at high current and high frequency. |
| Download |
| Filename: | Unnamed file |
| Filesize: | 326.5 KB |
|
| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
| |
 |