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A NEW METHOD FOR THE MEASUREMENT OF THE CONDUCTIVITY MOBILITY AS A FUNCTION OF INJECTION LEVEL IN SILICON REGIONS
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| Author(s) |
S. Bellone; G. V. Persiano; A. G. M. Strollo; S. Daliento |
| Abstract |
A new approach to measure the conductivity mobility dependence on the injection level is proposed. The technique also allows to explore the influence of the carrier-carrier scattering mechanism on the electron and hole mobility separately overcoming most of the limitations of other methods available in literature. Two-dimensional numerical simulation is used to asses the accuracy of the proposed measurement technique. Experimental results obtained on both n-type and p-type epitaxial regions are presented and compared to existing analytical mobility models. |
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| Filename: | Unnamed file |
| Filesize: | 334.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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