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TEMPERATURE NON CONTACT MEASUREMENTS ON THE SURFACE OF A GTO THYRISTOR IN COMMUTATION
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| Author(s) |
R. Abid; F. Misery |
| Abstract |
A temperature measurement non contact technique based on thermoreflectivity of oxidized silicon is presented. It is dedicated to power electron devices. The size of the optical probe is 20 micrometers, and the smallest temperature variation that can be detected is 10°C. The study of the temperature variation versus energy E dissipated during turn-off is performed on the surface of the gate-cathode junction in a 1,200 V GTO thyristor. |
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| Filename: | Unnamed file |
| Filesize: | 321.5 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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