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A Circuit Level Simulation Model of the IGBT
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| Author(s) |
Angelo Brambilla; Enrico Dallago |
| Abstract |
In this paper a circuit level model of the Insulated Gate Bipolar Transistor is presented. It was developed starting from the model of pnpn structure and the model equations of a power MOSFET. The proposed model considers the main factors influencing the characteristics of the IGBT such as the n- layer effects, the non linear junction capacitances, the Miller capacitance and the tail current. The paper presents the model equations and parameters. Validation tests on the electrical characteristics of the model are reported and discussed. |
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| Filename: | Unnamed file |
| Filesize: | 310 KB |
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| Type |
Members Only |
| Date |
Last modified 2018-05-17 by System |
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