EPE Association: EPE 1997 – 50: Dialogue Session DS1c: MONOLITHIC INTEGRATION

EPE 1997 – 50: Dialogue Session DS1c: MONOLITHIC INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 50: Dialogue Session DS1c: MONOLITHIC INTEGRATION

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   NEW CHALLENGES TOWARD SMART POWER
By P. Santos; A. P. Casimiro; M. I. Castro Simas; M. Lanya [View]
[Download]

Abstract: This paper firstly addresses power integrated circuits, discussing application areas. Secondly, an overview on the present status of technologies, which are used on smart power, will be presented. Topics considered to be a challenge, requiring further research efforts, will be discussed. Finally, the capabilities of a standard low cost CMOS technology, extended far beyond its usual limits and perspectives of further innovation to be used for smart power implementation, targeted to low or medium power applications, will also be reported in this paper.

   USE OF RAPID THERMAL PROCESSING FOR ISOLATION AND INTERCONNECT TECHNOLOGIES APPLIED TO SMART POWER
By J-M. Dilhac; L. Cornibert; G. Charitat; M. Bafleur; N. Nolhier; D. Zerrouk; C. Ganibal [View]
[Download]

Abstract: We first present a structure for the electrical isolation of the control devices used in High Voltage Integrated Circuits. This structure combines junction and dielectric isolation for the vertical and lateral isolation, respectively. The isolation performance is first theoretically assessed to estimate the oxide thickness required. Then, a method for creating the buried oxide layer is presented and experimentally evaluated. The crystal quality and the electrical properties of the thick SOI films are characterized. Power devices often need very deep boron diffusions extending through the thickness of the wafer to provide junction isolation. In this paper we also report our investigations to replace the standard process for solid-state deep diffusion, with Temperature-Gradient Zone Melting, where a molten silicon/aluminium solution moves through a Si wafer in minutes, leaving a highly AI doped trail behind it. Physical and electrical results are given.

   DESIGN OF POWER LDMOS TRANSISTORS FOR SMARTMOS (TM) INTEGRATED CIRCUITS
By D. Moncoqut; P. Rossel; H. Tranduc; G. Charitat; F. Morancho [View]
[Download]

Abstract: A design method is proposed for medium voltage Lateral DMOS power switches (30-100 Volts) used in "multi-switch" power integrated circuits. Physical properties, layout, process data, and thermal dependence of the Lateral DMOSFET structure are considered. This methodology makes it possible to predict the electric performances (I-V characteristics, inter-electrode capacitances, switching characteristics, etc., ... ) of these devices based on their design. The pertinence of this approach is demonstrated experimentally.

   THE DESIGN OF A SMART POWER SWITCH FOR HIGH-FREQUENCY CONVERTERS
By D.R.H. Carter; R.A. McMahon [View]
[Download]

Abstract: This paper describes the design of a smart power switch for use in converters operating up to 13.56 MHz. It includes a 500 V power MOSFET, MOS-gate driver, level-shifter and control circuitry for the construction of complete power stages for both half-bridges and Class E converters.

   LATCH-UP SUPPRESSED LIGBT WITH AN N-TYPE RING
By I. Y. Park; S. L. Kim; Y. I. Choi; S. K. Chung; J. Jo [View]
[Download]

Abstract: A new lateral insulated gate bipolar transistor (LIGBT) structure employing an n-type ring in the drift region is proposed and improvement of latch-up characteristics is verified by 20 device simulator, MEDIC!. The simulated I-V characteristics at Va=15 V show that the latch-up occurs at 2229 A/cm2 for the proposed LIGBT while the conventional LIGBT latches at 1143 A/cm2. It is shown that new LIGBT improves latch-up capability by 95 % of current density without reduction of breakdown voltage.

   INTEGRATION OF POLYSILICON DIODES IN A SMART POWER PROCESS
By I. CLAVERIE; J. MILLE; J. OUALID; O. BONNAUD; R. JERISIAN [View]
[Download]

Abstract: The authors show that polysilicon resistances and diodes can be elaborated in a smart power technology to realize the fimctions of thermal sensor, clamping and rectifier. The characteristics of these components are optimized to realize a selfprotection circuit for VD MOS transistors.

   TRANSIENT BEHAVIOUR OF ISOLATION ARCHITECTURES IN SMART POWER INTEGRATED CIRCUITS
By Evgueniy N. STEFANOV; Georges CHARITAT; Nicolas NOLHIER; Pierre ROSSEL [View]
[Download]

Abstract: We report an electrical analysis of the transient interaction between High Voltage devices and Low Voltage CMOS cell integrated on the same chip and separated by a mixed Dielectric/Junction, p-n juction and dielectric isolation architectures. The latchup dynamic of the CMOS commutation cell on transient high voltage biasing is studied and compared for the mentioned isolation concepts. The transient analysis is made by the rigorous 2-D numerical modeling program S-PISCES.

   ANALYTICAL MODEL FOR THE OPTIMIZATION OF THE TURNOFF PERFORMANCE OF A SELF-FIRING MOS-THYRISTOR DEVICE
By M. Breil; J-L. Sanchez [View]
[Download]

Abstract: Spontaneously-fired and controlled turn-offMOS-thyristor device associations based on the concept of functional integration are very well-suited to Zero Voltage Switching applications. In this paper, an analytical model describing the turn-off operation and parasitic latch-up of a four-layered structure is presented. This model allows to highlight and optimize the most important device parameters (such as cathode length and surface concentration in the P region) acting upon the turn-off performance. 2D simulations using PISCES are implemented in order to verify the validity of this model.

   MONOLITHIC INTEGRATION OF MOS-GATED OPTICALLY TRIGGERED THYRISTOR AND OVER-TEMPERATURE PROTECTION CIRCUIT
By O. Guillemet; R. Berriane; J. Jalade; J.L. Sanchez; J.P. Laur [View]
[Download]

Abstract: In this paper, an original over-temperature protection circuit based on the concept of functional integration of MOS and thyristor elements is described. The protection relies on the influence of temperature on reverse diode current and is included with a MOS-Gated Optically friggered Thyristor. The temperature sensor is located in the power device where overemperature appears.

   LOW COST INTEGRATION FOR MONOLITHIC SMART IGBT
By L. Fragapane; R. Letor; G. Percolla; M. Saggio; F. Saya [View]
[Download]

Abstract: The integration at low cost of simple functions in power device structure is going to be imposed as a trend in the Future of power electronic switches. This work demonstrates that the use of standard process is sufficient to design a smart IGBT: Only one additional· mask is needed to create all the sensing and active elements. The paper describes the structure, the characteristics of integrated elements and the feasible functional blocks.

   MONOLITHIC CONVERTER WITH HIGH EFFICIENCY FROM 3.5A DOWN TO 1mA
By M. R. Borghi; A. Magazzu [View]
[Download]

Abstract: This paper presents the L4973 device, a high efficiency step-down voltage feedforward mode switching regulator. It converts an unregulated continuous input voltage to a regulated output voltage and can deliver up to 3.5 Amps with an input supply range from 8V to 55V. The default output voltage is 5.1 V or 3 .36V, but using two external resistances it can be changed from 50V down to a few hundreds of millivolts. The device is developed using the mixed Bipolar, Cmos, Dmos (BCD) second generation technology: it allows low consumption and very fast switching transient which decrease the internal power dissipation and increase efficiency. At light loads a new system allows the correct regulator funcionality with high efficiency. The product includes two fully integrated current protections against overload and short-circuit on the output, protections against feedback disconnection and feedback overvoltage, input-output synchronization function on the same pin, inhibit for stand-by operation, thermal shutdown and soft-start function. The internal oscillator frequency can be modified up to 500KHz, varying.the external R-C net.

   A NOVEL LATERAL SOl BMFET WITH TRENCH-DIFFUSED GATE
By Doo-Young Kim; Dae-Seok Byeon; Min-Koo Han; Yearn-Ik Choi [View]
[Download]

Abstract: A novel lateral BMFET on SOI substrates is proposed and verified by the numerical simulation. In this structure, a cham1el is fonned between the p' regions that are difrused through the trench regions. It is shown that the proposed structure has improved current gain and forward blocking characteristics compared with the conventional SOI LBMFET. The characteristics of the proposed structure are varied by the depth and width of trench structure, the distance between the p' gates and the doping concentration of n· drift region, but not affected by the dopant type of substrate, contrary to the conventional lateral SOI BMFET.

   A Trench-Gate SOl LIGBT with Hole Collector
By W. O. Lee; B. H. Lee; J. C. Shin; J. E. Park; Y. S. Han; M. K. Han; Y. I. Choi [View]
[Download]

Abstract: A new trench-gate SOI Lateral Insulated Gate Bipolar Transistor (LIGBT) with hole collector is proposed to improve latch-up and forward voltage drop characteristics. The improved characteristics of the proposed device are showed numerically by simulator named ATLAS. It is shown that the proposed device exhibits 3 times larger latch-up capability than the non-trench LIGBT with hole collector. Also it is shown that the proposed device exhibits almost the same forward voltage drop in comparison to the conventional SOI LIGBT.

   MICROCONTROLLER POWERS SMALL MOTORS: SINGLE-CHIP SMART POWER IC CONTROLS A SERVO-VALVE
By Virginia NATALE; Michele PALAZZI; Giulio RICOTTI; Domenico ROSSI; Jean Jacques BARDYN; Philippe CHABBERT [View]
[Download]

Abstract: This paper reports about the implementation of a single-chip Smart-Power IC embedding an 8-bit microcontroller, analog circuits for data processing as well as a full protected power element (an H-bridge DMOS power stage capable of 60V, 4A) and intended to directly control a hydraulic servo-valve. Optimized for automotive applications (active suspensions, power steering, servo-braking), it can be, for its versatility, used as well in others applications like industrial, public works, etc.

   THE INTEGRABLE G.T.O. PROVIDES FUNCTIONAL INTEGRATION
By Dominique BERGOGNE; Robert PEZZANI; Beatrice RENON; Laurent MOINDRON [View]
[Download]

Abstract: The well known G.T.O-gate turn off thyristor-structure is used to provide an integrable switch compatible with mains operated applications. The authors describe how a uni-cellular G.T.O. structure can be integrated with other power and control devices on a single chip. Applications are presented to show that the G.T.O. can be used to provide such integrated functions.

   A MONOLITHIC FULL-INTEGRATED DEVICE FOR OFF-LINE SWITCHING POWER SUPPLY
By R. QUAGLINO; G. GATTAVARI [View]
[Download]

Abstract: A new device realised in BCD OFF-LINE technology (Bipolar - CMOS - highvoltage DMOS) integrated circuit for low power, off-line switching converters, implementing both control and power management, is described. The control is realised by a constant frequency PWM technique. The switch is implemented by a high voltage power MOSFET with BV>700 V. In the device is also present an high voltage current generator for start up bias.

EPE 1997 – 50: Dialogue Session DS1c: MONOLITHIC INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 50: Dialogue Session DS1c: MONOLITHIC INTEGRATION
	[return to parent folder]

	NEW CHALLENGES TOWARD SMART POWER By P. Santos; A. P. Casimiro; M. I. Castro Simas; M. Lanya	[View] [Download]
Abstract: This paper firstly addresses power integrated circuits, discussing application areas. Secondly, an overview on the present status of technologies, which are used on smart power, will be presented. Topics considered to be a challenge, requiring further research efforts, will be discussed. Finally, the capabilities of a standard low cost CMOS technology, extended far beyond its usual limits and perspectives of further innovation to be used for smart power implementation, targeted to low or medium power applications, will also be reported in this paper.

	USE OF RAPID THERMAL PROCESSING FOR ISOLATION AND INTERCONNECT TECHNOLOGIES APPLIED TO SMART POWER By J-M. Dilhac; L. Cornibert; G. Charitat; M. Bafleur; N. Nolhier; D. Zerrouk; C. Ganibal	[View] [Download]
Abstract: We first present a structure for the electrical isolation of the control devices used in High Voltage Integrated Circuits. This structure combines junction and dielectric isolation for the vertical and lateral isolation, respectively. The isolation performance is first theoretically assessed to estimate the oxide thickness required. Then, a method for creating the buried oxide layer is presented and experimentally evaluated. The crystal quality and the electrical properties of the thick SOI films are characterized. Power devices often need very deep boron diffusions extending through the thickness of the wafer to provide junction isolation. In this paper we also report our investigations to replace the standard process for solid-state deep diffusion, with Temperature-Gradient Zone Melting, where a molten silicon/aluminium solution moves through a Si wafer in minutes, leaving a highly AI doped trail behind it. Physical and electrical results are given.

	DESIGN OF POWER LDMOS TRANSISTORS FOR SMARTMOS (TM) INTEGRATED CIRCUITS By D. Moncoqut; P. Rossel; H. Tranduc; G. Charitat; F. Morancho	[View] [Download]
Abstract: A design method is proposed for medium voltage Lateral DMOS power switches (30-100 Volts) used in "multi-switch" power integrated circuits. Physical properties, layout, process data, and thermal dependence of the Lateral DMOSFET structure are considered. This methodology makes it possible to predict the electric performances (I-V characteristics, inter-electrode capacitances, switching characteristics, etc., ... ) of these devices based on their design. The pertinence of this approach is demonstrated experimentally.

	THE DESIGN OF A SMART POWER SWITCH FOR HIGH-FREQUENCY CONVERTERS By D.R.H. Carter; R.A. McMahon	[View] [Download]
Abstract: This paper describes the design of a smart power switch for use in converters operating up to 13.56 MHz. It includes a 500 V power MOSFET, MOS-gate driver, level-shifter and control circuitry for the construction of complete power stages for both half-bridges and Class E converters.

	LATCH-UP SUPPRESSED LIGBT WITH AN N-TYPE RING By I. Y. Park; S. L. Kim; Y. I. Choi; S. K. Chung; J. Jo	[View] [Download]
Abstract: A new lateral insulated gate bipolar transistor (LIGBT) structure employing an n-type ring in the drift region is proposed and improvement of latch-up characteristics is verified by 20 device simulator, MEDIC!. The simulated I-V characteristics at Va=15 V show that the latch-up occurs at 2229 A/cm2 for the proposed LIGBT while the conventional LIGBT latches at 1143 A/cm2. It is shown that new LIGBT improves latch-up capability by 95 % of current density without reduction of breakdown voltage.

	INTEGRATION OF POLYSILICON DIODES IN A SMART POWER PROCESS By I. CLAVERIE; J. MILLE; J. OUALID; O. BONNAUD; R. JERISIAN	[View] [Download]
Abstract: The authors show that polysilicon resistances and diodes can be elaborated in a smart power technology to realize the fimctions of thermal sensor, clamping and rectifier. The characteristics of these components are optimized to realize a selfprotection circuit for VD MOS transistors.

	TRANSIENT BEHAVIOUR OF ISOLATION ARCHITECTURES IN SMART POWER INTEGRATED CIRCUITS By Evgueniy N. STEFANOV; Georges CHARITAT; Nicolas NOLHIER; Pierre ROSSEL	[View] [Download]
Abstract: We report an electrical analysis of the transient interaction between High Voltage devices and Low Voltage CMOS cell integrated on the same chip and separated by a mixed Dielectric/Junction, p-n juction and dielectric isolation architectures. The latchup dynamic of the CMOS commutation cell on transient high voltage biasing is studied and compared for the mentioned isolation concepts. The transient analysis is made by the rigorous 2-D numerical modeling program S-PISCES.

	ANALYTICAL MODEL FOR THE OPTIMIZATION OF THE TURNOFF PERFORMANCE OF A SELF-FIRING MOS-THYRISTOR DEVICE By M. Breil; J-L. Sanchez	[View] [Download]
Abstract: Spontaneously-fired and controlled turn-offMOS-thyristor device associations based on the concept of functional integration are very well-suited to Zero Voltage Switching applications. In this paper, an analytical model describing the turn-off operation and parasitic latch-up of a four-layered structure is presented. This model allows to highlight and optimize the most important device parameters (such as cathode length and surface concentration in the P region) acting upon the turn-off performance. 2D simulations using PISCES are implemented in order to verify the validity of this model.

	MONOLITHIC INTEGRATION OF MOS-GATED OPTICALLY TRIGGERED THYRISTOR AND OVER-TEMPERATURE PROTECTION CIRCUIT By O. Guillemet; R. Berriane; J. Jalade; J.L. Sanchez; J.P. Laur	[View] [Download]
Abstract: In this paper, an original over-temperature protection circuit based on the concept of functional integration of MOS and thyristor elements is described. The protection relies on the influence of temperature on reverse diode current and is included with a MOS-Gated Optically friggered Thyristor. The temperature sensor is located in the power device where overemperature appears.

	LOW COST INTEGRATION FOR MONOLITHIC SMART IGBT By L. Fragapane; R. Letor; G. Percolla; M. Saggio; F. Saya	[View] [Download]
Abstract: The integration at low cost of simple functions in power device structure is going to be imposed as a trend in the Future of power electronic switches. This work demonstrates that the use of standard process is sufficient to design a smart IGBT: Only one additional· mask is needed to create all the sensing and active elements. The paper describes the structure, the characteristics of integrated elements and the feasible functional blocks.

	MONOLITHIC CONVERTER WITH HIGH EFFICIENCY FROM 3.5A DOWN TO 1mA By M. R. Borghi; A. Magazzu	[View] [Download]
Abstract: This paper presents the L4973 device, a high efficiency step-down voltage feedforward mode switching regulator. It converts an unregulated continuous input voltage to a regulated output voltage and can deliver up to 3.5 Amps with an input supply range from 8V to 55V. The default output voltage is 5.1 V or 3 .36V, but using two external resistances it can be changed from 50V down to a few hundreds of millivolts. The device is developed using the mixed Bipolar, Cmos, Dmos (BCD) second generation technology: it allows low consumption and very fast switching transient which decrease the internal power dissipation and increase efficiency. At light loads a new system allows the correct regulator funcionality with high efficiency. The product includes two fully integrated current protections against overload and short-circuit on the output, protections against feedback disconnection and feedback overvoltage, input-output synchronization function on the same pin, inhibit for stand-by operation, thermal shutdown and soft-start function. The internal oscillator frequency can be modified up to 500KHz, varying.the external R-C net.

	A NOVEL LATERAL SOl BMFET WITH TRENCH-DIFFUSED GATE By Doo-Young Kim; Dae-Seok Byeon; Min-Koo Han; Yearn-Ik Choi	[View] [Download]
Abstract: A novel lateral BMFET on SOI substrates is proposed and verified by the numerical simulation. In this structure, a cham1el is fonned between the p' regions that are difrused through the trench regions. It is shown that the proposed structure has improved current gain and forward blocking characteristics compared with the conventional SOI LBMFET. The characteristics of the proposed structure are varied by the depth and width of trench structure, the distance between the p' gates and the doping concentration of n· drift region, but not affected by the dopant type of substrate, contrary to the conventional lateral SOI BMFET.

	A Trench-Gate SOl LIGBT with Hole Collector By W. O. Lee; B. H. Lee; J. C. Shin; J. E. Park; Y. S. Han; M. K. Han; Y. I. Choi	[View] [Download]
Abstract: A new trench-gate SOI Lateral Insulated Gate Bipolar Transistor (LIGBT) with hole collector is proposed to improve latch-up and forward voltage drop characteristics. The improved characteristics of the proposed device are showed numerically by simulator named ATLAS. It is shown that the proposed device exhibits 3 times larger latch-up capability than the non-trench LIGBT with hole collector. Also it is shown that the proposed device exhibits almost the same forward voltage drop in comparison to the conventional SOI LIGBT.

	MICROCONTROLLER POWERS SMALL MOTORS: SINGLE-CHIP SMART POWER IC CONTROLS A SERVO-VALVE By Virginia NATALE; Michele PALAZZI; Giulio RICOTTI; Domenico ROSSI; Jean Jacques BARDYN; Philippe CHABBERT	[View] [Download]
Abstract: This paper reports about the implementation of a single-chip Smart-Power IC embedding an 8-bit microcontroller, analog circuits for data processing as well as a full protected power element (an H-bridge DMOS power stage capable of 60V, 4A) and intended to directly control a hydraulic servo-valve. Optimized for automotive applications (active suspensions, power steering, servo-braking), it can be, for its versatility, used as well in others applications like industrial, public works, etc.

	THE INTEGRABLE G.T.O. PROVIDES FUNCTIONAL INTEGRATION By Dominique BERGOGNE; Robert PEZZANI; Beatrice RENON; Laurent MOINDRON	[View] [Download]
Abstract: The well known G.T.O-gate turn off thyristor-structure is used to provide an integrable switch compatible with mains operated applications. The authors describe how a uni-cellular G.T.O. structure can be integrated with other power and control devices on a single chip. Applications are presented to show that the G.T.O. can be used to provide such integrated functions.

	A MONOLITHIC FULL-INTEGRATED DEVICE FOR OFF-LINE SWITCHING POWER SUPPLY By R. QUAGLINO; G. GATTAVARI	[View] [Download]
Abstract: A new device realised in BCD OFF-LINE technology (Bipolar - CMOS - highvoltage DMOS) integrated circuit for low power, off-line switching converters, implementing both control and power management, is described. The control is realised by a constant frequency PWM technique. The switch is implemented by a high voltage power MOSFET with BV>700 V. In the device is also present an high voltage current generator for start up bias.