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LATCH-UP SUPPRESSED LIGBT WITH AN N-TYPE RING
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| Author(s) |
I. Y. Park; S. L. Kim; Y. I. Choi; S. K. Chung; J. Jo |
| Abstract |
A new lateral insulated gate bipolar transistor (LIGBT) structure employing
an n-type ring in the drift region is proposed and improvement of latch-up
characteristics is verified by 20 device simulator, MEDIC!. The simulated I-V
characteristics at Va=15 V show that the latch-up occurs at 2229 A/cm2 for the
proposed LIGBT while the conventional LIGBT latches at 1143 A/cm2. It is shown that new LIGBT improves latch-up capability by 95 % of current density without reduction of breakdown voltage. |
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| Filename: | Unnamed file |
| Filesize: | 331.7 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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