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MONOLITHIC INTEGRATION OF MOS-GATED OPTICALLY TRIGGERED THYRISTOR AND OVER-TEMPERATURE PROTECTION CIRCUIT
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| Author(s) |
O. Guillemet; R. Berriane; J. Jalade; J.L. Sanchez; J.P. Laur |
| Abstract |
In this paper, an original over-temperature protection circuit based on the concept of functional integration of MOS and thyristor elements is described. The protection relies on the influence of temperature on reverse diode current and is included with a MOS-Gated Optically
friggered Thyristor. The temperature sensor is located in the power device where overemperature appears. |
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| Filename: | Unnamed file |
| Filesize: | 551 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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