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	DESIGN OF POWER LDMOS TRANSISTORS FOR SMARTMOS (TM) INTEGRATED CIRCUITS	[View]   [Download]
Author(s)	D. Moncoqut; P. Rossel; H. Tranduc; G. Charitat; F. Morancho
Abstract	A design method is proposed for medium voltage Lateral DMOS power switches (30-100 Volts) used in "multi-switch" power integrated circuits. Physical properties, layout, process data, and thermal dependence of the Lateral DMOSFET structure are considered. This methodology makes it possible to predict the electric performances (I-V characteristics, inter-electrode capacitances, switching characteristics, etc., ... ) of these devices based on their design. The pertinence of this approach is demonstrated experimentally.
Download	Filename: Unnamed file Filesize: 635.5 KB
Type	Members Only
Date	Last modified 2016-04-07 by System