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USE OF RAPID THERMAL PROCESSING FOR ISOLATION AND INTERCONNECT TECHNOLOGIES APPLIED TO SMART POWER
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| Author(s) |
J-M. Dilhac; L. Cornibert; G. Charitat; M. Bafleur; N. Nolhier; D. Zerrouk; C. Ganibal |
| Abstract |
We first present a structure for the electrical isolation of the control devices used in High Voltage Integrated Circuits. This structure combines junction and dielectric isolation for
the vertical and lateral isolation, respectively. The isolation performance is first theoretically assessed to estimate the oxide thickness required. Then, a method for creating the buried oxide layer is presented and experimentally evaluated. The crystal quality and the electrical properties
of the thick SOI films are characterized. Power devices often need very deep boron diffusions extending through the thickness of the wafer to provide junction isolation. In this paper we also
report our investigations to replace the standard process for solid-state deep diffusion, with Temperature-Gradient Zone Melting, where a molten silicon/aluminium solution moves
through a Si wafer in minutes, leaving a highly AI doped trail behind it. Physical and electrical results are given. |
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| Filesize: | 724.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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