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INTEGRATION OF POLYSILICON DIODES IN A SMART POWER PROCESS
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| Author(s) |
I. CLAVERIE; J. MILLE; J. OUALID; O. BONNAUD; R. JERISIAN |
| Abstract |
The authors show that polysilicon resistances and diodes can be elaborated in a smart power technology to realize the fimctions of thermal sensor, clamping and
rectifier. The characteristics of these components are optimized to realize a selfprotection circuit for VD MOS transistors. |
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| Filename: | Unnamed file |
| Filesize: | 438.2 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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