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A Trench-Gate SOl LIGBT with Hole Collector
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| Author(s) |
W. O. Lee; B. H. Lee; J. C. Shin; J. E. Park; Y. S. Han; M. K. Han; Y. I. Choi |
| Abstract |
A new trench-gate SOI Lateral Insulated Gate Bipolar Transistor (LIGBT) with hole collector is proposed to improve latch-up and forward voltage drop characteristics. The improved characteristics of the proposed device are showed numerically by simulator named ATLAS. It is shown that the proposed device exhibits 3 times larger latch-up capability than the non-trench LIGBT with hole collector. Also it is shown that the proposed device
exhibits almost the same forward voltage drop in comparison to the conventional SOI LIGBT. |
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| Filename: | Unnamed file |
| Filesize: | 397.9 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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