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ANALYTICAL MODEL FOR THE OPTIMIZATION OF THE TURNOFF PERFORMANCE OF A SELF-FIRING MOS-THYRISTOR DEVICE
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| Author(s) |
M. Breil; J-L. Sanchez |
| Abstract |
Spontaneously-fired and controlled turn-offMOS-thyristor device associations based on the concept of functional integration are very well-suited to Zero Voltage Switching
applications. In this paper, an analytical model describing the turn-off operation and parasitic latch-up of a four-layered structure is presented. This model allows to highlight and optimize
the most important device parameters (such as cathode length and surface concentration in the P region) acting upon the turn-off performance. 2D simulations using PISCES are implemented in order to verify the validity of this model. |
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| Filename: | Unnamed file |
| Filesize: | 674.4 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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