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A NOVEL LATERAL SOl BMFET WITH TRENCH-DIFFUSED GATE
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| Author(s) |
Doo-Young Kim; Dae-Seok Byeon; Min-Koo Han; Yearn-Ik Choi |
| Abstract |
A novel lateral BMFET on SOI substrates is proposed and verified by the numerical simulation. In this structure, a cham1el is fonned between the p' regions that are difrused through the trench regions. It is shown that the proposed structure has improved current gain and forward blocking
characteristics compared with the conventional SOI LBMFET. The characteristics of the proposed
structure are varied by the depth and width of trench structure, the distance between the p' gates and the doping concentration of n· drift region, but not affected by the dopant type of substrate, contrary to the conventional lateral SOI BMFET. |
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| Filename: | Unnamed file |
| Filesize: | 403.6 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-04-07 by System |
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